Ministry of Education
Sanjeev Manhas
VIDWAN ID: 49704

Dr Sanjeev Manhas

Male Doctor of Philosophy
Associate Professor | Electronics and Communication Engineering
Indian Institute of Technology, Roorkee
Uttarakhand
Expertise: Electrical and Electronic Engineering
Scopus 6602269066
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154 Publications
0 Projects
1512 Scopus Citations
1341 CrossRef
42 Years 11 Months Total Experience
Publications
154 Total
Articles
75
Proceedings
79
Activity

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Scopus Scopus
1,512 Citations
22 h-index
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1,341 Citations
22 h-index
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Professional Recognition

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Personal Details

Doctor of Philosophy
2003
N/A
Associate Professor
Jan 2011 – Present
Indian Institute of Technology, Roorkee | Electronics and Communication Engineering
Assistant Professor
Oct 1983 – Dec 2010
Indian Institute of Technology, Roorkee | Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Co-Authors (26)

Dr Naveen Kumar Navani
Dr Naveen Kumar Navani Indian Institute of Technology, Roorkee
Dr Anand Bulusu
Dr Anand Bulusu Indian Institute of Technology, Roorkee
Prof Sudeb Dasgupta
Prof Sudeb Dasgupta Indian Institute of Technology, Roorkee
Prof Brajesh Kumar Kaushik
Prof Brajesh Kumar Kaushik Indian Institute of Technology, Roorkee
Dr Ashok K. Saxena
Dr Ashok K. Saxena N/A
Prof Nagendra Prasad Pathak
Prof Nagendra Prasad Pathak Indian Institute of Technology, Roorkee
Dr Satinder Kumar Sharma
Dr Satinder Kumar Sharma Indian Institute of Technology, Mandi
Dr Pankaj Kumar
Dr Pankaj Kumar University of Petroleum and Energy Studies
Dr Baljit Kaur
Dr Baljit Kaur National Institute of Technology Delhi
Prof Gopinath Packirisamy
Prof Gopinath Packirisamy Indian Institute of Technology, Roorkee
Prof Partha Roy
Prof Partha Roy Indian Institute of Technology, Roorkee
Prof Brijesh Kumar
Prof Brijesh Kumar INDIRA GANDHI DELHI TECHNICAL UNIVERSITY FOR WOMEN
Dr Satish Maheshwaram
Dr Satish Maheshwaram National Institute of Technology, Warangal
Dr BISHNU PRASAD DAS
Dr BISHNU PRASAD DAS Indian Institute of Technology, Roorkee
Dr ARNAB DATTA
Dr ARNAB DATTA Indian Institute of Technology, Roorkee
Dr VISHVENDRA SINGH POONIA
Dr VISHVENDRA SINGH POONIA Indian Institute of Technology, Roorkee
Dr Manish M Joglekar
Dr Manish M Joglekar Indian Institute of Technology, Roorkee
Dr Debrupa Lahiri
Dr Debrupa Lahiri Indian Institute of Technology, Roorkee
Prof Pradeep Dixit
Prof Pradeep Dixit Indian Institute of Technology, Bombay
Dr Upendra Mohan Bhatt
Dr Upendra Mohan Bhatt Graphic Era University, Dehradun
Dr Ritu Varshney
Dr Ritu Varshney Charotar University of Science & Technology, Anand
Dr Manoj Kumar Majumder
Dr Manoj Kumar Majumder International Institute of Information Technology, Raipur
Prof Ajay Agarwal
Prof Ajay Agarwal Indian Institute of Technology, Jodhpur
Prof Naushad Alam
Prof Naushad Alam Aligarh Muslim University, Aligarh
Dr Madhav Kiritkumar Pathak
Dr Madhav Kiritkumar Pathak Indian Institute of Technology, Gandhinagar
Dr Ashish Kalkal Ph.D. MRSC
Dr Ashish Kalkal Ph.D. MRSC N/A

Scholarly Work

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Scholarly Publications

Comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Journal Article
Microelectronics Reliability. Year: 2001. Volume: 41 , Issue: 2 , Pages: 169-177 .
Authors: M.M. De Souza; J. Wang; S. Manhas; E.M. Sankara Narayanan; A.S. Oates
DOI 10.1016/S0026-2714(00)00210-9 Crossref Crossref: 4 Scopus Scopus: 5

Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs

Journal Article
Year: 2000. Pages: 108-111 .
Authors: S.K. Manhas; M.M. de Souza; A.S. Gates; S.C. Chetlur; E.M. Sankara Narayanan
DOI 10.1109/RELPHY.2000.843899 Crossref Crossref: 8 Scopus Scopus: 10

Degradation behaviour of polysilicon high voltage thin film transistors

Conference Paper
Year: 2002. Volume: 2002-January , Pages: 219-222 .
Authors: M. Mugnier; S.K. Manhas; D. Chandra Sekhar; S. Krishnan; R. Cross; E.M. Sankara Narayanan; M.M. De Souza; D. Flores; M. Vellvehi; J. Millan
DOI 10.1109/IPFA.2002.1025666

Quantifying the nature of hot carrier degradation in the spacer region of ldd nmosfets

Journal Article
IEEE Transactions on Device and Materials Reliability. Year: 2001. Volume: 1 , Issue: 3 , Pages: 134-143 .
Authors: S.K. Manhas; M.M. De Souza; A.S. Oates
DOI 10.1109/7298.974828 Crossref Crossref: 5 Scopus Scopus: 6

Progress in silicon RF Power MOS technologies-current and future trends

Conference Paper
Year: 2002.
Authors: M.M. De Souza; G. Cao; E.M. Sankara Narayanan; F. Youming; S.K. Manhas; J. Luo; N. Moguilnaia
DOI 10.1109/ICCDCS.2002.1004069 Crossref Crossref: 6 Scopus Scopus: 13

Characterisation of series resistance degradation through charge pumping technique

Journal Article
Microelectronics Reliability. Year: 2003. Volume: 43 , Issue: 4 , Pages: 617-624 .
Authors: S.K Manhas; D Chandra Sehkar; A.S Oates; M.M De Souza
DOI 10.1016/S0026-2714(03)00017-9

Nature of hot carrier damage in spacer oxide of LDD n-MOSFETs

Conference Paper
Year: 2002. Volume: 2 , Pages: 735-739 .
Authors: S.K. Manhas; D. Chandra Sekhar; A.S. Oates; M.M. De Souza
DOI 10.1109/MIEL.2002.1003362

Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers

Conference Paper
Year: 2002. Volume: 2002-January , Pages: 227-231 .
Authors: S.K. Manhas; M.M. De Souza; A.S. Oates; Y. Chen
DOI 10.1109/IPFA.2002.1025668
Showing 1 to 8 of 154 publications