Ministry of Education
ARNAB DATTA
VIDWAN ID: 155279

Dr ARNAB DATTA

Male Doctor of Philosophy
Assistant Professor | Electronics and Communication Engineering
Indian Institute of Technology, Roorkee
Uttar Pradesh
Expertise: Electrical and Electronic Engineering
ORCID 0000-0002-2931-1991 Scopus 27067587200
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43 Publications
0 Projects
266 Scopus Citations
261 CrossRef
13 Years 9 Months Total Experience
Publications
43 Total
Articles
34
Proceedings
9
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Scopus Scopus
266 Citations
9 h-index
CrossRef CrossRef
261 Citations
9 h-index
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Personal Details

Doctor of Philosophy
2010
Indian Institute of Technology, Hyderabad
Assistant Professor
Dec 2012 – Present
Indian Institute of Technology, Roorkee | Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells

Journal Article
Solid-State Electronics. Year: 2010. Volume: 54 , Issue: 4 , Pages: 397-404 .
Authors: A. Datta; S. Mahapatra
DOI 10.1016/j.sse.2009.11.006 Crossref Crossref: 1 Scopus Scopus: 1

Negative-To-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits

Journal Article
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. Year: 2022. Volume: 69 , Issue: 1 , Pages: 430-437 .
Authors: Nitanshu Chauhan; Navjeet Bagga; Shashank Banchhor; Arnab Datta; Sudeb Dasgupta; Anand Bulusu
DOI 10.1109/TUFFC.2021.3116897 Crossref Crossref: 22 Scopus Scopus: 23

Modeling and Analysis of Vertical p-n Junction, Graded Bandgap AlfGa1-fAs Rectangular-Slab and Cylindrical Solar Cells on Elevated GaAs Ridge and Wire

Journal Article
IEEE Transactions on Electron Devices. Year: 2017. Volume: 64 , Issue: 6 , Pages: 2564-2571 .
Authors: Bhuwan Kashyap; Arnab Datta
DOI 10.1109/TED.2017.2692267 Crossref Crossref: 5 Scopus Scopus: 5

Impact of varying strain energy in oxide on random telegraph noise and associated time constants in silicon nanowire pMOSFETs

Journal Article
IEEE Transactions on Electron Devices. Year: 2019. Volume: 66 , Issue: 3 , Pages: 1489-1494 .
Authors: Deepak Kumar Sharma; Arnab Datta
DOI 10.1109/TED.2019.2892551 Crossref Crossref: 2 Scopus Scopus: 3

Rate limited filament formation in Al-ZnO-Al bipolar ReRAM cells and its impact on early current window closure during cycling

Journal Article
Journal of Applied Physics. Year: 2019. Volume: 125 , Issue: 10 .
Authors: Amit Kumar Singh Chauhan; Deepak K. Sharma; Arnab Datta
DOI 10.1063/1.5087270 Crossref Crossref: 3 Scopus Scopus: 5

Oxide edge trap density extraction in silicon nanowire MOSFET from tunnel current noise measurement in gated diode like arrangement

Journal Article
IEEE Transactions on Device and Materials Reliability. Year: 2020. Volume: 20 , Issue: 3 , Pages: 512-516 .
Authors: Deepak Kumar Sharma; Arnab Datta
DOI 10.1109/TDMR.2020.3000356 Scopus Scopus: 1

Symmetric linear rise and fall of conductance in a trilayer stack engineered RERAM-based synapse

Journal Article
ACS Applied Electronic Materials. Year: 2020. Volume: 2 , Issue: 10 , Pages: 3263-3269 .
Authors: Kavita Vishwakarma; Rishabh Kishore; Arnab Datta
DOI 10.1021/acsaelm.0c00585 Crossref Crossref: 7 Scopus Scopus: 6

Sub-pico-second hole generation lifetime in thin film IGZO sputtered and annealed on P-silicon substrate

Journal Article
IEEE Transactions on Nanotechnology. Year: 2021. Volume: 20 , Pages: 392-399 .
Authors: Rishabh Kishore; Kavita Vishwakarma; Arnab Datta
DOI 10.1109/TNANO.2021.3077538 Crossref Crossref: 3 Scopus Scopus: 4
Showing 1 to 8 of 43 publications