Ministry of Education
Jagadesh Kumar Mamidala
VIDWAN ID: 43033

Prof Jagadesh Kumar Mamidala

Male Doctor of Philosophy
Chairman
University Grant Commission (2022)
Delhi
Expertise: Electrical and Electronic Engineering
ORCID 0000-0001-6657-1277 Scopus 7403637440 ResearcherID I-4264-2012 Google Scholar zgxxvhQAAAAJ
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284 Publications
0 Projects
2410 Scopus Citations
7634 CrossRef
27 Years 1 Month Total Experience
Publications
284 Total
Articles
234
Books
2
Chapters
1
Proceedings
47
Activity

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Scopus Scopus
2,410 Citations
25 h-index
CrossRef CrossRef
7,634 Citations
44 h-index
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Personal Details

Doctor of Philosophy
Indian Maritime University
Chairman
Jan 2022 – —
University Grant Commission
Professor (HAG)
Jun 2019 – Dec 1995
Indian Institute of Technology, Delhi | Department of Electrical Engineering
Vice Chancellor
Feb 2016 – Apr 2022
Jawaharlal Nehru University
Professor
Dec 1995 – Jul 2019
Indian Institute of Technology, Delhi | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Publications

ON THE DOMINANT RECOMBINATION LEVEL OF PLATINUM IN SILICON

Journal Article
Year: 1985. Volume: 87 , Issue: 2 , Pages: 651-655 .
Authors: Kumar, M. J.; Selvakumar, C. R.; Ramamurthy, V.; Bhat, K. N.
DOI 10.1002/pssa.2210870229 Crossref Crossref: 5

Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor

Journal Article
IEEE Electron Device Letters. Volume: 34 , Issue: 12 , Pages: 1575-1577 .
Authors: N. Kannan; M. Jagadesh Kumar
DOI 10.1109/led.2013.2283858 Crossref Crossref: 156

EFFECTS OF COLLECTOR LIFETIME ON THE CHARACTERISTICS OF HIGH-VOLTAGE POWER TRANSISTORS OPERATING IN THE QUASI-SATURATION REGION.

Journal Article
Year: 1987.
Authors: Bhat, K.N.; Kumar, M.Jagadesh; Ramasubramanian, V.; George, Peter

THE EFFECTS OF COLLECTOR LIFETIME ON THE CHARACTERISTICS OF HIGH-VOLTAGE POWER TRANSISTORS OPERATING IN THE QUASI-SATURATION REGION

Journal Article
IEEE Transactions on Electron Devices. Year: 1987. Volume: 34 , Issue: 5 , Pages: 1163-1169 .
Authors: Bhat, K. N.; Kumar, M. J.; Ramasubramanian, V.; George, P.
DOI 10.1109/t-ed.1987.23059 Crossref Crossref: 17

On the dominant recombination level of platinum in silicon

Journal Article
Year: 1985.

Optimum collector EPI-thickness of advanced bipolar transistors for high speed and high current operation

Journal Article
Solid-State Electronics. Year: 1994. Volume: 37 , Issue: 11 , Pages: 1885-1887 .
Authors: Kumar, M.J.; Roulston, D.J.
DOI 10.1016/0038-1101(94)90181-3 Crossref Crossref: 2

COLLECTOR DESIGN TRADEOFFS FOR LOW-VOLTAGE APPLICATIONS OF ADVANCED BIPOLAR-TRANSISTORS

Journal Article
IEEE Transactions on Electron Devices. Year: 1993. Volume: 40 , Issue: 8 , Pages: 1478-1483 .
Authors: Kumar, M. J.; Sadovnikov, A. D.; Roulston, D. J.
DOI 10.1109/16.223708 Crossref Crossref: 21

Collector recombination lifetime from the quasi-saturation analysis of high-voltage bipolar transistors

Journal Article
IEEE Transactions on Electron Devices. Year: 1990. Volume: 37 , Issue: 11 , Pages: 2395-2398 .
Authors: Kumar, M.Jagadesh; Bhat, K.N.
DOI 10.1109/16.62298 Crossref Crossref: 4
Showing 1 to 8 of 284 publications