Ministry of Education
Jagadesh Kumar Mamidala
VIDWAN ID: 43033

Prof Jagadesh Kumar Mamidala

Male Doctor of Philosophy
Chairman
University Grant Commission (2022)
Delhi
Expertise: Electrical and Electronic Engineering
ORCID 0000-0001-6657-1277 Scopus 7403637440 ResearcherID I-4264-2012 Google Scholar zgxxvhQAAAAJ
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284 Publications
0 Projects
2421 Scopus Citations
7634 CrossRef
27 Years 1 Month Total Experience
Publications
284 Total
Articles
234
Books
2
Chapters
1
Proceedings
47
Activity

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Scopus Scopus
2,421 Citations
25 h-index
CrossRef CrossRef
7,634 Citations
44 h-index
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Personal Details

Doctor of Philosophy
Indian Maritime University
Chairman
Jan 2022 – —
University Grant Commission
Professor (HAG)
Jun 2019 – Dec 1995
Indian Institute of Technology, Delhi | Department of Electrical Engineering
Vice Chancellor
Feb 2016 – Apr 2022
Jawaharlal Nehru University
Professor
Dec 1995 – Jul 2019
Indian Institute of Technology, Delhi | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Selective reactive ion etching of PECVD silicon nitride over amorphous silicon in CF4/H-2 and nitrogen containing CF4/H-2 plasma gas mixtures

Journal Article
Solid-State Electronics. Year: 1996. Volume: 39 , Issue: 1 , Pages: 33-37 .
Authors: Kumar, M. J.; Chamberlain, S. G.
DOI 10.1016/0038-1101(95)00109-7 Crossref Crossref: 8

New buried P+-grid polysilicon emitter bipolar power transistor

Journal Article
Solid-State Electronics. Year: 1995. Volume: 38 , Issue: 10 , Pages: 1854-1856 .
Authors: Kumar, M.J.; Roulston, D.J.
DOI 10.1016/0038-1101(95)00091-7 Crossref Crossref: 39

A simple hole scattering length model for the solution of charge transport in bipolar transistors

Journal Article
Year: 1999.
Authors: Datta, K.; Jagadesh Kumar, M.

Novel Ge-profile design for high-speed SiGe HBTs: modelling and analysis

Journal Article
IEE Proceedings - Circuits, Devices and Systems. Year: 1999. Volume: 146 , Issue: 5 , Pages: 291 .
Authors: Patri, V. S.; Kumar, M. J.
DOI 10.1049/ip-cds:19990626 Crossref Crossref: 13

Simple hole scattering length model for the solution of charge transport in bipolar transistors

Journal Article
IEEE Transactions on Electron Devices. Year: 1999. Volume: 46 , Issue: 6 , Pages: 1186-1188 .
Authors: Datta, K.; Kumar, M.Jagadesh
DOI 10.1109/16.766882

Profile design considerations for minimizing base transit time in SiGe HBT's

Journal Article
IEEE Transactions on Electron Devices. Year: 1998. Volume: 45 , Issue: 8 , Pages: 1725-1731 .
Authors: Patri, V. S.; Kumar, M. J.
DOI 10.1109/16.704371 Crossref Crossref: 39

Application of selectively delta-doped channel to control the floating body effect in submicron SOI MOSFETs

Conference Paper
Year: 2000.
Authors: Kumar, M.Jagadesh

Study of the extended p+ dual source structure for eliminating bipolar induced breakdown in submicron SOI MOSFET's

Journal Article
IEEE Transactions on Electron Devices. Year: 2000. Volume: 47 , Issue: 8 , Pages: 1678-1680 .
Authors: Verma, V.; Kumar, M.J.
DOI 10.1109/16.853048 Crossref Crossref: 12
Showing 17 to 24 of 284 publications