Naushad Alam
VIDWAN ID: 278340

Prof Naushad Alam

Male Doctor of Philosophy
Professor | Department of Electronics Engineering
Aligarh Muslim University, Aligarh
Uttar Pradesh
Expertise: Electrical and Electronic Engineering
44 Publications
1 Projects
675 Scopus Citations
706 CrossRef
9 Years 11 Months Total Experience
Publications
44 Total
Articles
24
Chapters
2
Proceedings
18
Activity

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Scopus Scopus
675 Citations
11 h-index
CrossRef CrossRef
706 Citations
13 h-index
Google Scholar Google Scholar

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Professional Recognition

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Community & Membership

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IEEE
Professional
Jan 2021
IETE
Fellow
Jan 2023

Personal Details

Doctor of Philosophy
2013
N/A
Master of Technology
2009
Assam University, Silchar
Bachelor of Technology
2003
Maulana Azad National Urdu University
Secondary School Examination (Class 10)
1996
University of Kentucky
Professor
Oct 2019 – Present
Aligarh Muslim University, Aligarh | Department of Electronics Engineering
Associate Professor
Oct 2016 – Oct 2019
Aligarh Muslim University, Aligarh | Department of Electronics Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

Design of Tunnel FET Based SRAM for IoT Applications
Completed
Agency: University Grants Commission Role: Principal Investigator Grant: F.30-377/2017(BSR

Design of Memory Circuits in CMOS and Beyond CMOS Technology

University Aligarh Muslim University
Year 2019
Downloads 0

Device-Circuit Co-Design for Low Power Applications

University Aligarh Muslim University
Year 2021
Downloads 0

Ultra-Low Power Analog Integrated Circuits in Technologies Beyond CMOS

University Aligarh Muslim University
Year 2022
Downloads 0

A Device Architecture for P-I-N Forward Leakage Current Suppression in TFET

Aligarh Muslim University
- Application No. : 202211020357 Filed : 04-04-2022
Published : 29-04-2022 Filed

Robust and Low Power Static Random Access Memory Cell (RLP-SRAM)

Sayeed Ahmad
Naushad Alam and Mohd Hasan
- Patent No. : 416535 Filed : 30-11--0001
Published : 30-11--0001 Published

Scholarly Publications

Impact of asymmetric dual-k spacers on tunnel field effect transistors

Journal Article
Journal of Computational Electronics. Year: 2018. Volume: 17 , Issue: 2 , Pages: 756-765 .
Authors: Mohd Adil Raushan; Naushad Alam; Mohd Waseem Akram; Mohd Jawaid Siddiqui

TFET-Based Robust 7T SRAM Cell for Low Power Application

Journal Article
IEEE Transactions on Electron Devices. Year: 2019. Volume: 66 , Issue: 9 , Pages: 3834-3840 .
Authors: Ahmad, S.; Ahmad, S.A.; Muqeem, M.; Alam, N.; Hasan, M.

Efficient ECSM characterization considering voltage, temperature, and mechanical stress variability

Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers. Year: 2014. Volume: 61 , Issue: 12 , Pages: 3407-3415 .
Authors: Baljit Kaur; Naushad Alam; S. K. Manhas; Bulusu Anand

The impact of process-induced mechanical stress in narrow width devices and variable-taper CMOS buffer design

Journal Article
Microelectronics Reliability. Year: 2013. Volume: 53 , Issue: 5 , Pages: 718-724 .
Authors: Naushad Alam; Bulusu Anand; S. Dasgupta

The impact of process-induced mechanical stress on CMOS buffer design using multi-fingered devices

Journal Article
Microelectronics Reliability. Year: 2013. Volume: 53 , Issue: 3 , Pages: 379-385 .
Authors: Naushad Alam; Bulusu Anand; S. Dasgupta

The impact of process-induced mechanical stress on d-latch timing performance

Conference Paper
Year: 2013. Pages: 212-216 .
Authors: Arvind Kumar Sharma; Naushad Alam; Bulnsu Anand; S. Dasgnpta

The impact of process-induced mechanical stress in narrow width devices and circuit design issues

Conference Paper
Year: 2012. Pages: 213-215 .
Authors: Naushad Alam; Bulusu Anand; S. Dasgupta

Gate-pitch optimization for circuit design using strain-engineered multifinger gate structures

Journal Article
IEEE Transactions on Electron Devices. Year: 2012. Volume: 59 , Issue: 11 , Pages: 3120-3123 .
Authors: Naushad Alam; Bulusu Anand; S. Dasgupta
Showing 1 to 8 of 44 publications