Ministry of Education
Dhrubes Biswas
VIDWAN ID: 158161

Prof Dhrubes Biswas

Male Doctor of Philosophy
Professor | Department of Electronics and Electrical Communication Engineering
Indian Institute of Technology, Kharagpur
West Bengal
Expertise: Electrical and Electronic Engineering
Scopus 55264479100 Google Scholar M3iwPc4AAAAJ
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126 Publications
0 Projects
1021 Scopus Citations
916 CrossRef
19 Years 1 Month Total Experience
Publications
126 Total
Articles
81
Books
1
Proceedings
44
Activity

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Scopus Scopus
1,021 Citations
16 h-index
CrossRef CrossRef
916 Citations
16 h-index
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Personal Details

Doctor of Philosophy
N/A
Professor
Aug 2007 – Present
Indian Institute of Technology, Kharagpur | Department of Electronics and Electrical Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Co-Authors (28)

Prof Baquer Mazhari
Prof Baquer Mazhari Indian Institute of Technology, Kanpur
Dr Kirat Pal
Dr Kirat Pal N/A
Dr Subhasis Ghosh
Dr Subhasis Ghosh Jawaharlal Nehru University
Dr Apurba Chakraborty
Dr Apurba Chakraborty Vellore Institute of Technology, Vellore
Dr Pallab Banerji
Dr Pallab Banerji Indian Institute of Technology, Kharagpur
Dr Satinder Kumar Sharma
Dr Satinder Kumar Sharma Indian Institute of Technology, Mandi
Dr Shubhankar Majumdar
Dr Shubhankar Majumdar National Institute of Technology Meghalaya
Dr Chitrakant Sahu
Dr Chitrakant Sahu Malviya National Institute of Technology, Jaipur
Dr Ankush Bag
Dr Ankush Bag N/A
Dr Sanatan Chattopadhyay
Dr Sanatan Chattopadhyay UNIVERSITY OF CALCUTTA
Prof Rabibrata Mukherjee
Prof Rabibrata Mukherjee Indian Institute of Technology, Kharagpur
Dr Gourab Dutta
Dr Gourab Dutta Indian Institute of Technology, Kharagpur
Dr Bhaskar Bhowmick
Dr Bhaskar Bhowmick Indian Institute of Technology, Kharagpur
Dr Sudip Kundu
Dr Sudip Kundu National Institute of Technology, Rourkela
Dr Apurba Chakraborty
Dr Apurba Chakraborty Vellore Institute of Technology, Vellore
Dr Sanjib Kabi
Dr Sanjib Kabi Sikkim Manipal University, Gangtok
Dr Rahul Kumar
Dr Rahul Kumar Birla Institute of Technology & Sciences, Pilani
Dr Apurba Chakraborty
Dr Apurba Chakraborty Birla Institute of Technology & Sciences, Pilani
Dr Utsav Banerjee
Dr Utsav Banerjee Indian Institute of Science, Bangalore
Prof Bijoy Bhattacharyya
Prof Bijoy Bhattacharyya MCKV Institute of Engineering 116
Dr Ankush Bag
Dr Ankush Bag Indian Institute of Technology, Guwahati
Dr Premangshu Mukhopadhyay
Dr Premangshu Mukhopadhyay Haldia Institute of Technology 103
Dr Mohd Zuhair
Dr Mohd Zuhair Nirma University
Dr Subrajeet Mohapatra
Dr Subrajeet Mohapatra Birla Institute of Technology, Ranchi
Dr Sandipan Mallik
Dr Sandipan Mallik N/A
Dr Satya Sopan Mahato
Dr Satya Sopan Mahato NIST Institute of Science and Technology (Autonomous), Berhampur
Dr Subhashis Das
Dr Subhashis Das University of Arkansas
Dr Palash Das
Dr Palash Das Cooch Behar Government Engineering College 349

Scholarly Work

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DOUBLE QUANTUM WELL NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

INDIAN INSTITUTE OF TECHNOLOGY KHARAGPUR | INDIAN INSTITUTE OF TECHNOLOGY KHARAGPUR
- Patent No. : IN201500277I2 Filed : 13-03-2015
Published : 10-07-2015 Published

Scholarly Publications

Growth and characterization of gallium arsenide on sapphire by molecular beam epitaxy

Conference Paper
Year: 1989. Volume: 970 , Pages: 86-91 .
Authors: D. Biswas; J-I Chyi; H Morkoc; S. DiVita; G. Kordas
DOI 10.1117/12.948181

Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV-1 cm-2 range

Journal Article
Applied Physics Letters. Year: 1993. Volume: 62 , Issue: 23 , Pages: 2977-2979 .
Authors: Z. Wang; M. E. Lin; D. Biswas; B. Mazhari; N. Teraguchi; Z. Fan; X. Gui; H. Morkoç
DOI 10.1063/1.109162 Crossref Crossref: 35 Scopus Scopus: 42

W-band penta-composite channel InAlAs/InGaAs metamorphic HEMT for high power application and comparison with pseudomorphic HEMT

Conference Paper
Year: 2010.

Reduction of negative differential conductivity effect of AlGaN/GaN HEMTs using gate scaling

Conference Paper
Year: 2010. Pages: 794-797 .
Authors: Sudip Kundu; Palash Das; Saptarshi Pathak; Partha Mukhopadhyay; Jasvardhan Reddy; Edward Y. Chang; Dhrubes Biswas
DOI 10.1109/NANO.2010.5697824 Scopus Scopus: 1

A 40-nm-Gate InAs/In 0.7Ga 0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f T

Conference Paper
Year: 2009. Pages: 128-131 .
Authors: Chien-I Kuo; Heng-Tung Hsu; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
DOI 10.1109/ICIPRM.2009.5012458 Scopus Scopus: 2

A strategic review of recent progress in metamorphic quantum well based heterostructure electronic devices

Conference Paper
Year: 2008. Pages: 503-506 .
Authors: Partha Mukhopadhyay; Palash Das; Saptarshi Pathak; Sudip Kundu; Edward Y. Chang; Dhrubes Biswas
DOI 10.1109/NANO.2008.151 Crossref Crossref: 1 Scopus Scopus: 4

Self-assembled in0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate

Journal Article
Journal of Applied Physics. Year: 2006. Volume: 100 , Issue: 6 .
Authors: Y. C. Hsieh; E. Y. Chang; G. L. Luo; S. H. Chen; Dhrubes Biswas; S. Y. Wang; C. Y. Chang
DOI 10.1063/1.2337770 Crossref Crossref: 7 Scopus Scopus: 7

Self-assembled in0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate

Conference Paper
Year: 2005. Volume: 1 , Pages: 414-417 .
Authors: Y.C. Hsieh; G.L. Luo; D. Biswas; E.Y. Chang
DOI 10.1109/NANO.2005.1500785
Showing 1 to 8 of 126 publications