Ministry of Education
Subhasis Ghosh
VIDWAN ID: 56636

Dr Subhasis Ghosh

Male Doctor of Philosophy
Professor | School of Physical Sciences
Jawaharlal Nehru University
Delhi
Expertise: Applied Physics
Scopus 56331756100
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170 Publications
0 Projects
2842 Scopus Citations
2691 CrossRef
31 Years 2 Months Total Experience
Publications
170 Total
Articles
113
Chapters
1
Proceedings
56
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2,842 Citations
32 h-index
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2,691 Citations
32 h-index
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Personal Details

Doctor of Philosophy
N/A
Professor
Jul 1995 – Present
Jawaharlal Nehru University | School of Physical Sciences
Physical Sciences
Applied Physics

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Scholarly Publications

Deep level transient spectroscopic study of DX center in heavily doped ion-implanted GaAs

Journal Article
Solid State Communications. Year: 1996. Volume: 98 , Issue: 2 , Pages: 195-199 .
Authors: Subhasis Ghosh; Vikram Kumar
DOI 10.1016/0038-1098(95)00322-3 Crossref Crossref: 2 Scopus Scopus: 2

A deep-level spectroscopic technique for determining capture cross-section activation energy of Si-related DX centers in AlxGa1-xAs

Journal Article
Journal of Applied Physics. Year: 1994. Volume: 75 , Issue: 12 , Pages: 8243-8245 .
Authors: Subhasis Ghosh; Vikram Kumar
DOI 10.1063/1.356505 Crossref Crossref: 5 Scopus Scopus: 5

Stretched exponential relaxation of persistent photoconductivity due to the si-Related Dx Centre in AlX Ga1-X-As

Open Access
Journal Article
EPL (Europhysics Letters). Year: 1993. Volume: 24 , Issue: 9 , Pages: 779-784 .
Authors: S Ghosh; V Kumar
DOI 10.1209/0295-5075/24/9/014 Crossref Crossref: 14 Scopus Scopus: 15

Direct evidence for the negative-U nature of the DX center in AlxGa1-xAs

Journal Article
Physical Review B. Year: 1992. Volume: 46 , Issue: 12 , Pages: 7533-7536 .
Authors: Subhasis Ghosh; Vikram Kumar
DOI 10.1103/PhysRevB.46.7533 Crossref Crossref: 13 Scopus Scopus: 15

Direct evidence for negative-U nature of DX centre in AlxGa1-x As

Conference Paper
Proceedings of SPIE. Year: 1992. Volume: 1523 , Pages: 82-84 .
Authors: Subhasis Ghosh; Vikram Kumar
DOI 10.1117/12.56992

Transient photoconductivity in Si-doped Al0.26Ga0.74As

Journal Article
Solid State Communications. Year: 1992. Volume: 83 , Issue: 1 , Pages: 37-39 .
Authors: Subhasis Ghosh; Vikram Kumar
DOI 10.1016/0038-1098(92)90009-X Crossref Crossref: 6 Scopus Scopus: 6

Physics of Si-related DX center in AlxGa1-xAs and GaAs

Journal Article
Year: 1996. Volume: 76 , Issue: 2 , Pages: 320-322 .

Effect of high-energy light-ion irradiation on SI-GaAs and GaAs:Cr as observed by Raman spectroscopy

Journal Article
JOURNAL OF RAMAN SPECTROSCOPY. Year: 2012. Volume: 43 , Issue: 2 , Pages: 344-350 .
Authors: Shramana Mishra; D. Kabiraj; Anushree Roy; Subhasis Ghosh
DOI 10.1002/jrs.3039 Crossref Crossref: 9 Scopus Scopus: 10
Showing 1 to 8 of 170 publications