Ministry of Education
Apurba Chakraborty
VIDWAN ID: 230545

Dr Apurba Chakraborty

Male Doctor of Philosophy
Assistant Professor | Department of Electrical and Electronics engineering
Birla Institute of Technology & Sciences, Pilani
Goa
Expertise: Electrical and Electronic Engineering
ORCID 0000-0002-3009-7849 Scopus 55429395000 ResearcherID O-6209-2017 Google Scholar VYFuNdUAAAAJ
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33 Publications
0 Projects
257 Scopus Citations
242 CrossRef
10 Years 1 Month Total Experience
Publications
33 Total
Articles
23
Proceedings
10
Activity

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Scopus Scopus
257 Citations
11 h-index
CrossRef CrossRef
242 Citations
11 h-index
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Professional Recognition

Secured 8th and 11th position in PCB (Medical) and PCM (Engineering) group respectively in Tripura Board of Joint Entrance Examination-2004
2004
TBSE
MHRD scholarship during M.Tech
2010
MHRD
Junior Research Fellowship and Senior Research Fellowship, by DeitY
2012
DeiTY

Community & Membership

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Personal Details

Doctor of Philosophy
2016
Indian Institute of Technology, Ropar
Master of Technology
2012
Banwarilal Bhalotia College
Bachelor of Engineering
2008
N/A
Assistant Professor
Feb 2021 – Present
Birla Institute of Technology & Sciences, Pilani | Department of Electrical and Electronics engineering
Assistant Professor
Aug 2020 – Feb 2021
Vellore Institute of Technology, Vellore | Department of Micro and Nanoelectronics
Assistant Professor
Aug 2016 – Jul 2020
National Institute of Technology, Agartala | Department of Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

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Scholarly Publications

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

Conference Paper
Year: 2014. Pages: 269-272 .
Authors: Saptarsi Ghosh; Syed Mukulika Dinara; Ankush Bag; Apurba. chakraborty; Partha Mukhopadhyay; Sanjib Kabi; Dhrubes Biswas
DOI 10.1007/978-3-319-03002-9_68

Analytical Expression of Barrier Layer for Enhancement Mode AlGaN/GaN HEMT

Conference Paper
Year: 2014. Pages: 175-177 .
Authors: Apurba Chakraborty; Saptarshi Ghosh; Ankush Bag; Palash Das; Dhrubes Biswas
DOI 10.1007/978-3-319-03002-9_44

Effect of algan barrier thickness on trapping characteristics in algan/gan heterostructures

Conference Paper
Year: 2019. Volume: 215 , Pages: 183-186 .
Authors: Apurba Chakraborty; Saptarsi Ghosh; Subhashis Das; Ankush Bag; Dhrubes Biswas
DOI 10.1007/978-3-319-97604-4_28

Impact of stress effect on triple material gate step-FinFET with DC and AC analysis

Journal Article
Microsystem Technologies. Year: 2020. Volume: 26 , Issue: 6 , Pages: 1813-1821 .
Authors: Rinku Rani Das; Atanu Chowdhury; Apurba Chakraborty; Santanu Maity
DOI 10.1007/s00542-019-04727-2 Crossref Crossref: 11 Scopus Scopus: 14

Temperature Dependent Linearity/Harmonic Analysis for FinFET and Gate All Around (GAA) Nanowire FET

Conference Paper
Year: 2021.
Authors: Rinku Rani Das; Atanu Chowdhury; Apurba Chakraborty
DOI 10.1109/AESPC52704.2021.9708499 Scopus Scopus: 1

Mathematical Modelling of β-(AlxGal-x)2O3/Ga2O3 Heterostructure

Conference Paper
Year: 2022.
Authors: Devinderjit Multani; Ankush Bag; Apurba Chakraborty
DOI 10.1109/ICEE56203.2022.10117781 Scopus Scopus: 1

Parametric analysis on DC and analog/linearity response of multi-channel FinFET (Mch-FinFET) with spacer engineering

Journal Article
Analog Integrated Circuits and Signal Processing. Year: 2024. Volume: 119 , Issue: 1 , Pages: 1-13 .
Authors: Rinku Rani Das; Atanu Chowdhury; Apurba Chakraborty
DOI 10.1007/s10470-023-02209-0 Crossref Crossref: 5 Scopus Scopus: 4

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

Journal Article
Applied Physics Letters. Year: 2015. Volume: 106 , Issue: 8 , Pages: 082112 .
Authors: Chakraborty, A.; Biswas, D.
DOI 10.1063/1.4913916 Crossref Crossref: 11 Scopus Scopus: 11
Showing 1 to 8 of 33 publications