Ministry of Education
Ankush Bag
VIDWAN ID: 297788

Dr Ankush Bag

Male Doctor of Philosophy
Associate Professor | Department of Electronics and Electrical Engineering
Indian Institute of Technology, Guwahati
Expertise: Electrical and Electronic Engineering
ORCID 0000-0003-4038-3037 Scopus 56405692300
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36 Publications
0 Projects
483 Scopus Citations
461 CrossRef
10 Years 1 Month Total Experience
Publications
36 Total
Articles
30
Proceedings
6
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Scopus Scopus
483 Citations
12 h-index
CrossRef CrossRef
461 Citations
12 h-index
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Personal Details

Doctor of Philosophy
2016
Indian Institute of Technology, Ropar
Associate Professor
Dec 2024 – Present
Indian Institute of Technology, Guwahati | Department of Electronics and Electrical Engineering
Assistant Professor
Dec 2021 – Dec 2024
Indian Institute of Technology, Guwahati | Department of Electronics and Electrical Engineering
Assistant Professor
Aug 2016 – Dec 2021
Indian Institute of Technology, Mandi
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Erratum: High-resolution X-ray diffraction analysis of Al<inf>x</inf>Ga<inf>1-x</inf>N/In<inf>x</inf>Ga<inf>1-x</inf>N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations (Journal of Applied Physics (2014) 115 (174507))

Journal Article
Journal of Applied Physics. Year: 2015. Volume: 117 , Issue: 4 , Pages: 049905 .
Authors: Jana, S.K.; Mukhopadhyay, P.; Ghosh, S.; Kabi, S.; Bag, A.; Kumar, R.; Biswas, D.
DOI 10.1063/1.4907314

Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate

Journal Article
Microelectronics Reliability. Year: 2017. Volume: 78 , Pages: 389-395 .
Authors: Majumdar, S.; Bag, A.; Biswas, D.
DOI 10.1016/j.microrel.2017.08.016 Crossref Crossref: 12 Scopus Scopus: 15

Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K

Journal Article
IEEE Electron Device Letters. Year: 2017. Volume: 38 , Issue: 3 , Pages: 383-386 .
Authors: Das, S.; Bag, A.; Kumar, R.; Biswas, D.
DOI 10.1109/LED.2017.2647831 Crossref Crossref: 16 Scopus Scopus: 16

Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

Journal Article
IEEE Transactions on Electron Devices. Year: 2017. Volume: 64 , Issue: 11 , Pages: 4650-4656 .
Authors: Das, S.; Ghosh, S.; Kumar, R.; Bag, A.; Biswas, D.
DOI 10.1109/TED.2017.2748461 Crossref Crossref: 26 Scopus Scopus: 26

Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles

Journal Article
Materials & Design. Year: 2017. Volume: 133 , Pages: 176-185 .
Authors: Bag, A.; Majumdar, S.; Das, S.; Biswas, D.
DOI 10.1016/j.matdes.2017.07.061 Crossref Crossref: 7 Scopus Scopus: 7

Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

Journal Article
Electronic Materials Letters. Year: 2016. Volume: 12 , Issue: 3 , Pages: 356-364 .
Authors: Kumar, R.; Bag, A.; Mukhopadhyay, P.; Das, S.; Biswas, D.
DOI 10.1007/s13391-016-5318-8 Crossref Crossref: 9 Scopus Scopus: 10

Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance

Journal Article
PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS. Year: 2016. Volume: 13 , Issue: 5-6 , Pages: 186-189 .
Authors: Bag, A.; Das, S.; Biswas, D.
DOI 10.1002/pssc.201510202 Crossref Crossref: 1 Scopus Scopus: 3

2DEG modulation in double quantum well enhancement mode nitride HEMT

Journal Article
Physica E: Low-dimensional Systems and Nanostructures. Year: 2015. Volume: 74 , Pages: 59-64 .
Authors: Bag, A.; Das, P.; Kumar, R.; Mukhopadhyay, P.; Majumdar, S.; Kabi, S.; Biswas, D.
DOI 10.1016/j.physe.2015.06.011 Crossref Crossref: 23 Scopus Scopus: 26
Showing 1 to 8 of 36 publications