Mohan Kumar N
VIDWAN ID: 644911

Dr Mohan Kumar N

Male Doctor of Philosophy
Professor | Department of Engineering
Symbiosis International (Deemed University), Pune
Maharashtra
Expertise: Materials Science Biomaterials
178 Publications
0 Projects
913 Scopus Citations
1656 CrossRef
2 Years 3 Months Total Experience
Publications
178 Total
Articles
88
Chapters
1
Proceedings
89
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Scopus Scopus
913 Citations
16 h-index
CrossRef CrossRef
1,656 Citations
23 h-index
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Personal Details

Doctor of Philosophy
2010
N/A
Professor
Jun 2024 – Present
Symbiosis International (Deemed University), Pune | Department of Engineering
Engineering and Technology
Materials Science Biomaterials

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Scholarly Work

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Scholarly Publications

Effect of single HALO doped channel in tunnel FETs: A 2-D modeling study

Conference Paper
Year: 2010.
Authors: B Syamal; C Bose; C K Sarkar; N Mohankumar

Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions

Journal Article
Microelectronics Reliability. Year: 2012. Volume: 52 , Issue: 11 , Pages: 2572-2578 .
Authors: Kalyan Koley; Binit Syamal; Atanu Kundu; N. Mohankumar; C.K. Sarkar

RF parameter extraction of bulk FinFET: A non quasi static approach

Conference Paper
Year: 2010.
Authors: Atanu Kundu; Binit Syamal; Kalyan Koley; C K Sarkar; N Mohankumar

A surface potential based drain current model for asymmetric double gate MOSFETs

Journal Article
Solid-State Electronics. Year: 2011. Volume: 56 , Issue: 1 , Pages: 148-154 .
Authors: Dutta, P.; Syamal, B.; Mohankumar, N.; Sarkar, C.K.

Unified drain current model for independently driven Double Gate MOSFETs

Conference Paper
Year: 2010. Pages: 44-47 .
Authors: Syamal, B.; Sarkar, C.K.; Dutta, P.; Mohankumar, N.

Effect of fringing field in modeling of subthreshold surface potential in dual material gate(DMG) MOSFETs

Conference Paper
Year: 2008. Pages: 148-151 .
Authors: De, S.; Sarkar, A.; Mohankumar, N.; Sarkar, C.K.

Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III-V heterostructure underlap DG MOSFET

Journal Article
Physica E: Low-dimensional Systems and Nanostructures. Year: 2012. Volume: 46 , Pages: 61-67 .
Authors: Pardeshi, H.; Kumar Pati, S.; Raj, G.; Mohankumar, N.; Kumar Sarkar, C.

Influence of channel and gate engineering on the analog and rf performance of DG MOSFETs

Journal Article
IEEE Transactions on Electron Devices. Year: 2010. Volume: 57 , Issue: 4 , Pages: 820-826 .
Authors: Mohankumar, N.; Syamal, B.; Sarkar, C.K.
Showing 1 to 8 of 178 publications