Trupti Ranjan Lenka
VIDWAN ID: 55422

Dr Trupti Ranjan Lenka

Male Doctor of Philosophy
Assistant Professor | Department of Electronics and Communication Engineering
National Institute of Technology, Silchar
Assam
Expertise: Electrical and Electronic Engineering
62 Publications
0 Projects
124 Scopus Citations
108 CrossRef
13 Years 9 Months Total Experience
Publications
62 Total
Articles
37
Books
1
Chapters
4
Proceedings
20
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Scopus Scopus
124 Citations
6 h-index
CrossRef CrossRef
108 Citations
6 h-index
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Personal Details

Doctor of Philosophy
2012
Mahatma Gandhi University, Tura, West Garo Hills
Assistant Professor
Dec 2012 – Present
National Institute of Technology, Silchar | Department of Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Design and simulation of T-gate AlN/β-Ga2O3 HEMT for DC, RF and high-power nanoelectronics switching applications

Journal Article
Authors: Rajan Singh; G. Purnachandra Rao; Trupti Ranjan Lenka; S. V. S. Prasad; Nour El. I. Boukortt; Giovanni Crupi; Hieu Pham Trung Nguyen

A Comparative Study of Diverse RF-MEMS Switch Design Concepts Experimentally Verified up to 110 GHz for Beyond-5G, 6G and Future Networks Applications

Conference Paper
Year: 2024. Volume: 1067 , Pages: 427-440 .
Authors: Jacopo Iannacci; Girolamo Tagliapietra; Massimo Donelli; P. Arockia Michael Mercy; Lakshmi Narayana Thalluri; Koushik Guha; Trupti Ranjan Lenka

Investigation of Normally-Off β-Ga2 O3 Power MOSFET Using Ferroelectric Gate

Conference Paper
Year: 2024. Volume: 1067 , Pages: 189-197 .
Authors: Rajan Singh; G. Purnachandra Rao; Trupti Ranjan Lenka; S. V. S. Prasad; Kiran Dasari; Pulkit Singh; Hieu Pham Trung Nguyen

Enhancing AlGaN/GaN MOSHEMT functionality through strategic Al2O3 and AlN layer engineering

Conference Paper
Year: 2024.
Authors: Abdul Naim Khan; S. N. Mishra; K. Jena; Meenakshi Chauhan; Gaurav Chatterjee; Trupti Ranjan Lenka

Rear-Passivation Effect on Thin-Film Perovskite/u-CIGS Tandem Solar Cell Performance

Conference Paper
Year: 2024.
Authors: Nour El I Boukortt; Antonio Garcia Loureiro; Salvatore Patanè; Mohamed Trabelsi; Trupti Ranjan Lenka; Ahmad Abushattal

DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions

Conference Paper
Year: 2024.
Authors: G. Purnachandra Rao; Trupti Ranjan Lenka; Samadrita Das; Hieu Pham Trung Nguyen

Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2 O3 Substrate

Conference Paper
Year: 2024. Volume: 1067 , Pages: 111-121 .
Authors: G. Purnachandra Rao; Trupti Ranjan Lenka; Nour El. I. Boukortt; Hieu Pham Trung Nguyen

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field-plated III-nitride nano-HEMT on β-Ga2O3 substrate

Journal Article
Authors: G. Purnachandra Rao; Trupti Ranjan Lenka; Nour El. I. Boukort; Hieu Pham Trung Nguyen
Showing 1 to 8 of 62 publications