Mohan kumar N
VIDWAN ID: 464223

Dr Mohan kumar N

Male Doctor of Philosophy
Professor | Department of Electronics and Communication Engineering
B.V Raju Institute of Technology (2023 - 2024)
Telangana
Expertise: Multidisciplinary Engineering
199 Publications
0 Projects
994 Scopus Citations
1741 CrossRef
20 Years 9 Months Total Experience
Publications
199 Total
Articles
89
Chapters
2
Proceedings
108
Activity

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Scopus Scopus
994 Citations
16 h-index
CrossRef CrossRef
1,741 Citations
23 h-index
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Professional Recognition

Career Award for Young Teachers
2012
AICTE

Community & Membership

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IEEE
SENIOR MEMBER
Jan 2016

Personal Details

Doctor of Philosophy
2010
National Institute of Cholera and Enteric Diseases
Master of Engineering
2004
National Institute of Cholera and Enteric Diseases
Bachelor of Engineering
2000
GCIL (WELSPUN GROUP)
Professor
Dec 2023 – May 2024
B.V Raju Institute of Technology | Department of Electronics and Communication Engineering
Head of the Department
Jun 2019 – May 2023
Unknown Organization
Principal
Jul 2015 – May 2019
S.K.P Engineering College
Professor
Jul 2012 – Jun 2015
S.K.P Engineering College
Associate Professor
Sep 2009 – Jun 2012
S.K.P Engineering College
Assistant Professor
Jan 2005 – Dec 2006
Sri Ramakrishna Institute of Technology
Assistant Professor
Jul 2000 – Dec 2004
Jayaram College of Engineering and Technology
Engineering and Technology
Multidisciplinary Engineering

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Scholarly Work

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Scholarly Publications

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

Journal Article
Year: 2015. Volume: 46 , Issue: 12 , Pages: 1387-1391 .
Authors: Jebalin, B.K.; Shobha Rekh, A.; Prajoon, P.; Mohan Kumar, N.; Nirmal, D.

Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications

Journal Article
Superlattices and Microstructures. Year: 2015. Volume: 78 , Pages: 210-223 .
Authors: Jebalin, B.K.; Shobha Rekh, A.; Prajoon, P.; Godwinraj, D.; Mohan Kumar, N.; Nirmal, D.

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

Journal Article
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS. Year: 2013. Volume: 41 , Issue: 6 , Pages: 608-618 .
Authors: Nirmal, D.; Vijayakumar, P.; Shruti, K.; Mohankumar, N.

Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials

Journal Article
International Journal of Electronics. Year: 2013. Volume: 100 , Issue: 6 , Pages: 803-817 .
Authors: Nirmal, D.; Vijayakumar, P.; Patrick Chella Samuel, P.; Jebalin, B.K.; Mohankumar, N.

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

Journal Article
Microelectronics Reliability. Year: 2013. Volume: 53 , Issue: 3 , Pages: 499-504 .
Authors: Nirmal, D.; Vijayakumar, P.; Thomas, D.M.; Jebalin, B.K.; Mohankumar, N.

A review of nanoscale channel and gate engineered FINFETS for VLSI mixed signal applications using Zirconium-di-oxide dielectrics

Open Access
Journal Article
Journal of Engineering Science and Technology Review. Year: 2014. Volume: 7 , Issue: 2 , Pages: 119-124 .
Authors: Nirmal, D.; Vijaya Kumar, P.; Shruti, K.; Jebalin, B.K.; Mohankumar, N.

Analytical model of symmetric halo doped DG-Tunnel FET

Open Access
Journal Article
Journal of Engineering Science and Technology Review. Year: 2015. Volume: 8 , Issue: 4 , Pages: 125-130 .
Authors: Nagarajan, S.; korah, R.; Mohankumar, N.; Sarkar, C.K.

Effect of single HALO doped channel in tunnel FETs: A 2-D modeling study

Conference Paper
Year: 2010.
Authors: B Syamal; C Bose; C K Sarkar; N Mohankumar
Showing 1 to 8 of 199 publications