Analytical Modelling and TCAD Analysis of Nanoscale MOSFET Devices
Completed
Role: Principal Investigator
Physical Modeling of Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) With Field Plate Structure for High Power, High Frequency and Highly Efficient Power Amplifiers
Completed
Agency: Defence Research and Development OrganisationRole: Principal Investigator
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Scholarly Publications
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor
Authors: Jitender Kumar; Aparna N. Mahajan; S. S. Deswal; Amit Saxena; R. S. Gupta
Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
Authors: Jitender Kumar; Aparna N. Mahajan; S. S. Deswal; Amit Saxena; R. S. Gupta
Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5 G/LTE Applications