Dr Nisha Chugh
Assistant Professor (Grade-I)
Vivekanand Institute of Professional Studies
(2023)
Delhi
Expertise:
Electrical and Electronic Engineering
17
Publications
1
Projects
95
Scopus Citations
81
CrossRef
8 Years 4 Months Total Experience
Scopus
95
Citations
6
h-index
CrossRef
81
Citations
5
h-index
Google Scholar
Loading Scholar statistics...
Professional Recognition
Best Paper Award
2021
4th International Conference on Energy Systems, Drives and Automations (ESDA-2021), Kolkata, West B
UGC-NET(Electronic Science
2013
UGC
Community & Membership
No Data Found
There is currently nothing to display here.
IAENG
PermanentPersonal Details
Doctor of Philosophy
2021
N/A
Master of Technology
2012
N/A
Bachelor of Engineering
2010
N/A
Assistant Professor (Grade-I)
Aug 2023 – —
Vivekanand Institute of Professional Studies
Visiting Assistant Professor
Jan 2023 – May 2023
Institute of Information Technology and Management, Janakpuri
Research Fellow
Nov 2017 – Sep 2020
Maharaja Agrasen Institute of Technology
Assistant Professor
Jul 2013 – Dec 2016
Jagannath University, Jaipur
| Department of Engineering and Technology
Assistant Professor
Jan 2013 – Jun 2013
Shobhit University, Meerut
Engineering and Technology
Scholarly Work
Physical Modeling of Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) with Field Plate Structure of High Power, High frequency & Highly efficient Power Amplifiers
CompletedNo Data Found
There is currently nothing to display here.
No Data Found
There is currently nothing to display here.
Scholarly Publications
Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs
Impact of donor-layer doping thickness, gate-length and temperature on potential and electron concentration in AlGaN/GaN Double-Heterostructure and Single-Heterostructure HEMT
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach
Fundamentals of Semiconductor and Future Aspects
A 360° Industry Process Optimization Using Industry 4.0 Technologies
Sheet carrier concentration and threshold voltage modeling of asymmetrically doped AlGaN/GaN/AlGaN double heterostructure HEMT
Impact of Donor Layer Thickness, Doping Concentration and Gate-Width on Gate-Capacitance of AlGaN/GaN Single and Double Heterostructure HEMT for Microwave Frequency Applications
RF Performance comparison of Dual Material Gate (DMG) and Conventional AlGaN/GaN High Electron Mobility Transistor
10.1109/ICDCSyst.2018.8605122
Scopus: 3
Showing 1 to 8 of 17 publications