Nihar Ranjan Mohapatra
VIDWAN ID: 53658

Dr Nihar Ranjan Mohapatra

Male Doctor of Philosophy
Professor | Electrical Engineering
Indian Institute of Technology, Gandhinagar
Gujarat
Expertise: Electrical and Electronic Engineering
151 Publications
0 Projects
1111 Scopus Citations
956 CrossRef
15 Years 2 Months Total Experience
Publications
151 Total
Articles
64
Proceedings
87
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Scopus Scopus
1,111 Citations
15 h-index
CrossRef CrossRef
956 Citations
13 h-index
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Personal Details

Doctor of Philosophy
2003
Indian Institute of Technology, Hyderabad
Professor
Feb 2020 – Present
Indian Institute of Technology, Gandhinagar | Electrical Engineering
Associate Professor
Nov 2015 – Feb 2020
Indian Institute of Technology, Gandhinagar | Electrical Engineering
Assistant Professor
Jul 2011 – Nov 2015
Indian Institute of Technology, Gandhinagar | Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Effect of fringing capacitances in sub 100 nm MOSFET's with high-k gate dielectrics

Conference Paper
Year: 2001. Pages: 479-482 .

Sub-100 nm CMOS circuit performance with high-K gate dielectrics

Journal Article
Microelectronics Reliability. Year: 2001. Volume: 41 , Issue: 7 , Pages: 1045-1048 .
Authors: N.R. Mohapatra; A. Dutta; G. Sridhar; M.P. Desai; V.R. Rao

Effect of technology scaling on MOS transistor performance with high-K gate dielectrics

Conference Paper
MRS Online Proceedings Library Archive. Year: 2002. Volume: 716 , Pages: 133-138 .
Authors: Nihar R. Mohapatra; Madhav P. Desai; Siva G. Narendra; V. Ramgopal Rao

The Impact of high-K gate dielectrics on sub 100 nm CMOS circuit performance

Conference Paper
Year: 2001. Pages: 239-242 .
Authors: N.R. Mohapatra; M.P. Desai; S.G. Narendra; V. Ramgopal Rao

Effective dielectric thickness scaling for high-K gate dielectric MOSFETs

Conference Paper
Year: 2002. Volume: 716 , Pages: 215-219 .
Authors: Krishna Kumar Bhuwalka; Nihar R. Mohapatra; Siva G. Narendra; V Ramgopal Rao

Study of degradation in channel initiated secondary electron injection regime

Conference Paper
Year: 2001. Pages: 291-294 .
Authors: N.R. Mohapatra; S. Mahapatra; V. Ramgopal Rao

A comparative study of scaling properties of MOS transistors in CHE and CHISEL injection regime

Conference Paper
Proceedings of SPIE. Year: 2002. Volume: 4746 I , Pages: 686-689 .

Device scaling effects on substrate enhanced degradation in MOS transistors

Conference Paper
Year: 2002. Volume: 716 , Pages: 287-292 .
Authors: Nihar Ranjan Mohapatra; Souvik Mahapatra; V. Ramgopal Rao
Showing 1 to 8 of 151 publications