Harshit Agarwal
VIDWAN ID: 110583

Dr Harshit Agarwal

Male Doctor of Philosophy
Associate Professor | Department of Electronics Engineering
Indian Institute of Technology, Jodhpur
Rajasthan
Expertise: Electrical and Electronic Engineering
102 Publications
0 Projects
1666 Scopus Citations
1556 CrossRef
6 Years 9 Months Total Experience
Publications
102 Total
Articles
53
Books
2
Chapters
2
Proceedings
45
Activity

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Scopus Scopus
1,666 Citations
22 h-index
CrossRef CrossRef
1,556 Citations
21 h-index
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Personal Details

Doctor of Philosophy
2017
N/A
Associate Professor
May 2026 – Present
Indian Institute of Technology, Jodhpur | Department of Electronics Engineering
Associate Professor
Jun 2023 – May 2026
Indian Institute of Technology, Jodhpur | Department of Electrical Engineering
Assistant Professor
Dec 2019 – Jun 2023
Indian Institute of Technology, Jodhpur | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

BSIM compact MOSFET models for SPICE simulation

Conference Paper
Year: 2013.
Authors: Chauhan, Y.S.; Venugopalan, S.; Paydavosi, N.; Kushwaha, P.; Jandhyala, S.; Duarte, J.P.; Agnihotri, S.; Yadav, C.; Agarwal, H.; Niknejad, A.; Hu, C.C.

High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

Conference Paper
Year: 2013. Pages: 56-61 .
Authors: Sahoo, J.R.; Agarwal, H.; Yadav, C.; Kushwaha, P.; Khandelwal, S.; Gillon, R.; Chauhan, Y.S.

Predictive effective mobility model for FDSOI transistors using technology parameters

Conference Paper
Year: 2016. Pages: 448-451 .
Authors: Pragya Kushwaha; Harshit Agarwal; Yogesh S. Chauhan; Mandar Bhoir; Nihar R. Mohapatra; Sourabh Khandelwal; Juan P. Duarte; Yen-Kai Lin; Huan-Lin Chang; Chenming Hu

Analysis and modeling of capacitances in halo-implanted MOSFETs

Conference Paper
Year: 2017. Pages: 198-200 .
Authors: Gupta, C.; Agarwal, H.; Dey, S.; Hu, C.; Chauhan, Y.S.

Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

Open Access
Journal Article
Japanese Journal of Applied Physics. Year: 2017. Volume: 56 , Issue: 4S , Pages: 04CD09 .
Authors: Gupta, C.; Agarwal, H.; Lin, Y.K.; Ito, A.; Hu, C.; Chauhan, Y.S.

Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling

Journal Article
IEEE Transactions on Electron Devices. Year: 2017. Volume: 64 , Issue: 2 , Pages: 376-383 .
Authors: Agarwal, H.; Gupta, C.; Dey, S.; Khandelwal, S.; Hu, C.; Chauhan, Y.S.

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Journal Article
Solid-State Electronics. Year: 2016. Volume: 115 , Pages: 33-38 .
Authors: Agarwal, H.; Kushwaha, P.; Gupta, C.; Khandelwal, S.; Hu, C.; Chauhan, Y.S.

Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

Conference Paper
Year: 2016. Pages: 444-447 .
Authors: Agarwal, H.; Kushwaha, P.; Chauhan, Y.S.; Khandelwal, S.; Duarte, J.P.; Lin, Y.-K.; Chang, H.-L.; Hu, C.; Wu, H.; Ye, P.D.
Showing 1 to 8 of 102 publications