Ministry of Education
Ashish Raman
VIDWAN ID: 90303

Dr Ashish Raman

Male Doctor of Philosophy
Associate Professor | Department of Electronics and Communication Engineering
Dr. B. R. Ambedkar National Institute of Technology, Jalandhar
Punjab
Expertise: Electrical and Electronic Engineering
ORCID 0000-0002-6720-373X Scopus 55031124900 ResearcherID X-8646-2019 Google Scholar Kijr1p
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157 Publications
1 Projects
1181 Scopus Citations
1088 CrossRef
19 Years Total Experience
Publications
157 Total
Articles
81
Books
3
Chapters
19
Proceedings
54
Activity

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Scopus Scopus
1,181 Citations
18 h-index
CrossRef CrossRef
1,088 Citations
16 h-index
Google Scholar Google Scholar

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Professional Recognition

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Community & Membership

Member of Institution of Engineers, India
Member
Jan 2018
Member of IEEE & Electron Devices Society (EDS), Electron Circuit Society USA
Member
Jan 2018
IEEE Electron Devices Society
Member
Jan 2018
IEEE Solid-State Circuits Society
Member
Jan 2018
IEI
Member
Jan 2017

Personal Details

Doctor of Philosophy
2015
Guru Ghasidas Vishwavidyalaya, Bilaspur
Master of Technology
2005
N/A
Associate Professor
Sep 2007 – Present
Dr. B. R. Ambedkar National Institute of Technology, Jalandhar | Department of Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

SMDP-C2SD
Other
Agency: Ministry of Electronics & Information Technology Role: Co-Principal Investigator
Amount: ₹99
Duration: 2014 – Ongoing
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Scholarly Publications

An efficient low-power configured dual material gate-all-around nanotube TFET with hetero-dielectric layers

Journal Article
Physica Scripta. Year: 2025. Volume: 100 , Issue: 5 .
Authors: Pankaj Kumar; Ashish Raman
DOI 10.1088/1402-4896/adcaf7 Crossref Crossref: 5 Scopus Scopus: 6

Design and characteristics analysis of a biosensor based on electrostatic doped heterostructure nanotube TFET with optimized structure

Journal Article
MRS Communications. Year: 2025. Volume: 15 , Issue: 2 , Pages: 205-212 .
Authors: Soumya Sen; Mamta Khosla; Ashish Raman
DOI 10.1557/s43579-025-00702-3 Crossref Crossref: 5 Scopus Scopus: 5

Performance Enhancement of Normally-OFF AlGaN/GaN HEMT using Delta-doped GaN cap Layer

Journal Article
Semiconductors. Year: 2025. Volume: 59 , Issue: 4 , Pages: 374-381 .
Authors: Ashish Raman; K Sumanth Krishna; Ravi Ranjan; Sarabdeep Singh
DOI 10.1134/S1063782624601456 Crossref Crossref: 12 Scopus Scopus: 13

Exploring the depths of sigma-delta analog-to digital converters: A comprehensive review

Book Chapter
Year: 2025. Pages: 311-336 .
Authors: Ravita; Ashish Raman; Ramesh K Sunkaria
DOI 10.2174/9789815313208125010015

GaN-based high electron mobility transistor

Book Chapter
Year: 2025. Pages: 193-212 .
Authors: Nipun Sharma; Ashish Raman; Ravi Ranjan
DOI 10.2174/9789815313208125010011 Crossref Crossref: 1 Scopus Scopus: 1

Structural analysis of feedback field effect transistor and its applications

Book Chapter
Year: 2025. Pages: 173-192 .
Authors: Simranjit Singh; Ashish Raman; Ravi Ranjan; Prabhat Singh
DOI 10.2174/9789815313208125010010

Preface

Editorial
Year: 2025. Pages: ii .
Authors: Ashish Raman; Prabhat Singh; Naveen Kumar; Ravi Ranjan
DOI 10.2174/9789815313208125010002 Scopus Scopus: 1

A comprehensive overview of the foundations of semiconductor materials

Book Chapter
Year: 2025. Pages: 80-109 .
Authors: Agnibha Dasgupta; Soumya Sen; Prabhat Singh; Ashish Raman
DOI 10.2174/9789815313208125010007 Crossref Crossref: 8 Scopus Scopus: 13
Showing 49 to 56 of 157 publications