Ministry of Education
V . Venkataraman
VIDWAN ID: 66305

Prof V . Venkataraman

Male
Professor | Physics
Indian Institute of Science, Bangalore
Karnataka
Expertise: Astronomy and Astrophysics
Scopus 7005737851
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98 Publications
0 Projects
1324 Scopus Citations
1210 CrossRef
8 Months Total Experience
Publications
98 Total
Articles
68
Proceedings
30
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Scopus Scopus
1,324 Citations
21 h-index
CrossRef CrossRef
1,210 Citations
19 h-index
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Professor
Jan 2026 – Present
Indian Institute of Science, Bangalore | Physics
Physical Sciences
Astronomy and Astrophysics

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A MEMORY DEVICE COMPRISING ALUMINIUM OXIDE PHOSPHATE WITH TUNABLE TRAPS AND METHOD THEREOF

INDIAN INSTITUTE OF SCIENCE
IN
- Patent No. : IN201947035701A Filed : 05-09-2019
Published : 10-04-2020 Published

DISPOSITIF DE MÉMOIRE COMPRENANT DU PHOSPHATE D'OXYDE D'ALUMINIUM À PIÈGES RÉGLABLES ET PROCÉDÉ ASSOCIÉ | A MEMORY DEVICE COMPRISING ALUMINUM OXIDE PHOSPHATE WITH TUNABLE TRAPS AND METHOD THEREOF

INDIAN INSTITUTE OF SCIENCE
IN
- Patent No. : WO2019069262A1 Filed : 04-10-2018
Published : 11-04-2019 Published

COLORIMETRIC BIOSENSOR FOR RAPID DETECTION OF PATHOGENIC MICROORGANISMS AND METHOD THEREOF

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201641044659A Filed : 28-12-2016
Published : 29-03-2019 Published

A METHOD OF QUANTITATIVE DETERMINATION OF GLYCATED HEMOGLOBIN USING BIOSENSOR AND COMPOSITION THEREFOR

Indian Institute of Science
- Patent No. : IN201641041349A Filed : 02-12-2016
Published : 08-06-2018 Published

BIOSENSOR STRIP, COMPOSITION AND METHOD OF USE THEREOF

Indian Institute of Science
- Patent No. : IN201507047I4 Filed : 29-12-2015
Published : 30-06-2017 Published

ULTRASENSITIVE, PHOTOSTABLE AQUEOUS TETRAMETHYLBENZIDINE MONOREAGENT COMPOSITION

Indian Institute of Science
- Patent No. : IN201404000I4 Filed : 14-08-2014
Published : 01-07-2016 Published

AN APPARATUS FOR ENHANCED FLOURESCENCE DETECTION

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201302333I4 Filed : 29-05-2013
Published : 10-06-2016 Published

Scholarly Publications

Carrier confinement in MOS-gated GexSi1-x/Si heterostructures

Conference Paper
Year: 1990. Pages: 383-386 .
Scopus Scopus: 19

Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

Journal Article
IEEE Electron Device Letters. Year: 1991. Volume: 12 , Issue: 5 , Pages: 230-232 .
Authors: P.M. Garone; V. Venkataraman; J.C. Sturni
DOI 10.1109/55.79566 Crossref Crossref: 70 Scopus Scopus: 70

A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si1-xGex/Si HBT's

Conference Paper
Year: 1993. Pages: 87-90 .
Scopus Scopus: 8

Hole Mobility Enhancement in MOS-Gated GexSi1-x /Si Heterostructure Inversion Layers

Journal Article
IEEE Electron Device Letters. Year: 1992. Volume: 13 , Issue: 1 , Pages: 56-58 .
Authors: P.M. Garone; V. Venkataraman; J.C. Sturm
DOI 10.1109/55.144950 Crossref Crossref: 91 Scopus Scopus: 98

High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-xGex heterostructures

Conference Paper
Year: 1991. Pages: 261-263 .
Authors: J. C. Sturm; P. M. Garone; V. Venkataraman
DOI 10.7567/ssdm.1991.pb4-6 Scopus Scopus: 1

Mobility enhancement and quantum mechanical modeling in GexSi1-x channel MOSFETs from 90 to 300 K

Conference Paper
Year: 1991. Volume: 1991-January , Pages: 29-32 .
Authors: P.M. Garone; V. Venkataraman; J.C. Sturn
DOI 10.1109/IEDM.1991.235431 Scopus Scopus: 8

Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition

Journal Article
Applied Physics Letters. Year: 1991. Volume: 59 , Issue: 22 , Pages: 2871-2873 .
Authors: V. Venkataraman; P. V. Schwartz; J. C. Sturm
DOI 10.1063/1.105837 Crossref Crossref: 19 Scopus Scopus: 22

Alloy scattering limited transport of two-dimensional carriers in strained Si1-xGex quantum wells

Journal Article
Applied Physics Letters. Year: 1993. Volume: 63 , Issue: 20 , Pages: 2795-2797 .
Authors: V. Venkataraman; C. W. Liu; J. C. Sturm
DOI 10.1063/1.110337 Crossref Crossref: 35 Scopus Scopus: 33
Showing 1 to 8 of 98 publications