Abhishek Acharya
VIDWAN ID: 609131

Dr Abhishek Acharya

Male Doctor of Philosophy
Associate Professor | Department of Electronics Engineering
Sardar Vallabhbhai National Institute of Technology, Surat
Gujarat
Expertise: Electrical and Electronic Engineering
74 Publications
8 Projects
263 Scopus Citations
237 CrossRef
23 Years 1 Month Total Experience
Publications
74 Total
Articles
44
Chapters
4
Proceedings
26
Activity

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Scopus Scopus
263 Citations
10 h-index
CrossRef CrossRef
237 Citations
10 h-index
Google Scholar Google Scholar

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Professional Recognition

Google Gift Funding of USD 30000
2024
Google Inc. Singapore
International Travel Grant
2017
IIT Roorkee
Senior IEEE Member
2021
IEEE Society, USA

Community & Membership

IEEE Computer Society Technical Community on VLSI
Member
Jan 2023
IEEE SIGHT
Member
Jan 2023
IEEE
Senior Member
Jan 2016
IEEE Nanotechnology Council
Member
Jan 2016
IEEE Young Professionals
Member
Jan 2016
IEEE Circuits and Systems Society Membership
Member
Jan 2022
IEEE Electron Devices Society Membership
Member
Jan 2016
IEEE Solid-State Circuits Society Membership
Member
Jan 2023

Personal Details

Doctor of Philosophy
2019
Jawaharlal Nehru University
Associate Professor
Dec 2023 – Present
Sardar Vallabhbhai National Institute of Technology, Surat | Department of Electronics Engineering
Assistant Professor
Dec 2019 – Dec 2023
Sardar Vallabhbhai National Institute of Technology, Surat | Department of Electronics Engineering
Assistant Professor
Aug 2003 – Nov 2019
Engineering College,Bikaner
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

Development of IoT Edge Computing Applications using Optimized Near Threshold Voltage (NTV) Standard Cells with OPENLANE
Other
Role: Principal Investigator
Design and Characterization of Radiation Hardened Standard Cell Library using Nanosheet Field Effect Transistors: Improving on Design Margins/Reliability
Other
Agency: Department of Science and Technology Role: Principal Investigator
Secure and Energy efficient Mixed domain Compute in memory-based AI accelerator Chip for Edge applications
Other
Role: Co-Principal Investigator
Design, Fabrication and Characterization of optimized 2D-Material SOT-MTJ for Energy Efficient Embedded Memory (MRAM) / Sensing Applications
Other
Agency: Department of Science and Technology Role: Principal Investigator
Design and Fabrication of BiOI-based Indoor Photovoltaic Devices for Development of Self-Powered IoT Ecosystem
Other
Agency: Department of Science and Technology Role: Co-Principal Investigator
Development of Speech based Mobile Application for Lung Disease Detection
Other
Agency: Department of Science and Technology Role: Co-Principal Investigator
A TCAD Framework for Assessment of Spacer Material and Back-Gate Bias on the Electrical Performance of Negative Capacitance FETs
Completed
Role: Principal Investigator
Investigation of Hybrid TFET/FinFET based Circuit Design Methodology for the Ultra Low Power Applications
Completed
Agency: Department of Secondary and Higher Education Role: Principal Investigator

Design and Optimization of Gate-All-Around Nanosheet Field-effect Transistor: A Physical Insight

University Sardar Vallabhbhai National Institute of Technology Surat
Year 2025
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Advancing Spin-Orbit Torque Magnetic Tunnel Junctions for Scalable Field-Free Switching and Logic-in-Memory Architectures

University Sardar Vallabhbhai National Institute of Technology Surat
Year 2025
Downloads 0
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Scholarly Publications

Efficient total ionizing dose-aware standard cell characterization methodology for path-level timing performance in nanoscale digital circuit applications

Journal Article
Nanotechnology. Year: 2026. Volume: 37 , Issue: 4 .
Authors: Lomash Chandra Acharya; Khoirom Johnson Singh; Neha Gupta; Mahipal Dargupally; Neeraj Mishra; Arvind Kumar Sharma; Abhishek Acharya; Venkatraman Ramakrishnan; Ajoy Mandal; Sudeb Dasgupta; Anand Bulusu

Unveiling the Impact of Non-Ideal Gate in Stacked Nanosheet FETs

Conference Paper
Year: 2026.
Authors: Jyoti Prakash Purohit; Vinitha Kamidi; Shobhit Shrivastava; Akhilesh Jain; Divya Singh; Abhishek Acharya

Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight

Open Access
Book Chapter
Year: 2023. Pages: 165-186 .
Authors: Abhishek Acharya; Sourabh Panwar; Shobhit Srivastava; M. Shashidhara

Performance optimization of III–V homo/heterojunction line TFET: Device-circuit Interaction

Journal Article
Solid-State Electronics. Year: 2025. Volume: 229 .
Authors: Sourabh Panwar; Kummari Kesava; Shobhit Srivastava; M Shashidhara; Sandeep Rankawat; Abhishek Acharya

Performance Assessment of Spacer Engineered Si/SiGe Line Tunnel FETs

Conference Paper
Year: 2026.
Authors: Akhilesh Jain; Jatothu Naveen; Sourabh Panwar; Jyoti Prakash Purohit; Shashidhara M; Abhishek Acharya

Impact of Body Bias on Metal–Ferroelectric–Insulator Stacked Si/SiGe Negative Capacitance Line TFET: A Physical Insight

Journal Article
IEEE Transactions on Dielectrics and Electrical Insulation. Year: 2025. Volume: 32 , Issue: 5 , Pages: 2666-2673 .
Authors: Sourabh Panwar; Shobhit Srivastava; M. Shashidhara; Shashank Banchhor; Abhishek Acharya

Self-Heating Aware Performance Investigation of Vertically and Sideway Stacked GAA Nanowire FETs at Sub-5nm Technology Node

Conference Paper
Year: 2026. Pages: 341-346 .
Authors: Guruprasad Reddy; Jagan V; Shashidhara M; Shobhit Srivastava; Abhishek Acharya

Self-SHE Pulse-Enabled 2-D Material-Based SOT-MTJ: A Scalable and Energy-Efficient Write Circuit for LiM Architectures

Journal Article
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. Year: 2026. Volume: 45 , Issue: 3 , Pages: 1134-1145 .
Authors: M. Shashidhara; Gokul VG; Shobhit Srivatsava; Sourabh Panwar; Abhishek Acharya
Showing 1 to 8 of 74 publications