Manoj Saxena
VIDWAN ID: 60671

Dr Manoj Saxena

Male Doctor of Philosophy
Associate Professor
University of Delhi (2012 - 2019)
Delhi
Expertise: Nanoscience and Nanotechnology
265 Publications
0 Projects
3865 Scopus Citations
3535 CrossRef
7 Years 5 Months Total Experience
Publications
265 Total
Articles
158
Books
11
Chapters
5
Proceedings
91
Activity

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Scopus Scopus
3,865 Citations
32 h-index
CrossRef CrossRef
3,535 Citations
30 h-index
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Professional Recognition

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Community & Membership

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IEEE EDS SRC Region 10
Vice Chair
Jan 2015
IEEE, USA
Senior Member
Jan 2008
Institution of Engineering and Technology (IET), United Kingdom (UK)
MIET - Member
Jan 2008
International Association of Engineers, Hong Kong
Member
Jan 2008
Institute of Physics (IOP)
MInstP - Member
Jan 2011

Personal Details

Doctor of Philosophy
2006
Acharya NG Ranga Agricultural University, Guntur
Associate Professor
Aug 2012 – Dec 2019
University of Delhi
Engineering and Technology
Nanoscience and Nanotechnology

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Scholarly Work

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Scholarly Publications

Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency

Journal Article
IEEE Transactions on Electron Devices. Year: 2002. Volume: 49 , Issue: 11 , Pages: 1928-1938 .
Authors: Saxena, M.; Haldar, S.; Gupta, M.; Gupta, R.S.

Physics-based modelling and simulation of dual material gate stack (DUMGAS) MOSFET

Journal Article
Electronics Letters. Year: 2003. Volume: 39 , Issue: 1 , Pages: 155-157 .
Authors: Saxena, M.; Haldar, S.; Gupta, M.; Gupta, R.S.

Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET

Journal Article
Solid-State Electronics. Year: 2003. Volume: 47 , Issue: 11 , Pages: 2131-2134 .
Authors: Saxena, M.; Haldar, S.; Gupta, M.; Gupta, R.S.

Two-dimensional analytical modeling and simulation of retrograde doped HMG MOSFET

Journal Article
Year: 2005. Pages: 52-59 .
Authors: Gupta, RS; Goel, Kirti; Gupta, Mridula; Saxena, Manoj

Two-dimensional analytical modeling and simulation of retrograde doped HMG mosfet

Journal Article
International Journal of High Speed Electronics and Systems. Year: 2004. Volume: 14 , Issue: 03 , Pages: 676-683 .
Authors: Gupta, R.S.; Goel, K.; Gupta, M.; Saxena, M.

Design considerations for novel device architecture: Hetero-material double-gate (HEM-DG) MOSFET with sub-100 nm gate length

Journal Article
Solid-State Electronics. Year: 2004. Volume: 48 , Issue: 7 , Pages: 1169-1174 .
Authors: Saxena, M.; Haldar, S.; Gupta, M.; Gupta, R.S.

Two-dimensional analytical threshold voltage model for DMG Epi-MOSFET

Journal Article
IEEE Transactions on Electron Devices. Year: 2005. Volume: 52 , Issue: 1 , Pages: 23-29 .
Authors: Goel, K.; Saxena, M.; Gupta, M.; Gupta, R.S.

Three region Hetero-Material Gate Oxide Stack (TMGOS) Epi-MOSFET: A new device structure for reduced short channel effects

Conference Paper
Year: 2005.
Authors: Goel, K.; Saxena, M.; Gupta, M.; Gupta, R.S.
Showing 1 to 8 of 265 publications