Prof Amitava Das Gupta
Chair Professor
| Department of Electrical Engineering
Indian Institute of Technology, Madras
Tamil Nadu
Expertise:
Electrical and Electronic Engineering
172
Publications
0
Projects
2520
Scopus Citations
2257
CrossRef
33 Years 4 Months Total Experience
Scopus
2,520
Citations
26
h-index
CrossRef
2,257
Citations
23
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Professional Recognition
DAAD Fellowship
1992
Institut for Hochfrequenztechnik, Darmstadt, Germany
Fellowship
Indian National Academy of Engineering
Community & Membership
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Personal Details
Doctor of Philosophy
1988
N/A
Chair Professor
Apr 2016 – Present
Indian Institute of Technology, Madras
| Department of Electrical Engineering
Professor
Apr 2006 – Mar 2016
Indian Institute of Technology, Madras
| Department of Electrical Engineering
Associate Professor
Sep 2000 – Apr 2006
Indian Institute of Technology, Madras
| Department of Electrical Engineering
Assistant Professor
May 1993 – Sep 2000
Indian Institute of Technology, Madras
| Department of Electrical Engineering
Engineering and Technology
Scholarly Work
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A compact model of gan hemts based on 2deg charge linearization
Effect of gate dielectric engineering on performance of gan-based mis-hemts
Design and development of piezoelectrically actuated valveless micropump for drug delivery application
Fabrication and study of low pull in voltage structures for rf mems shunt switches
Study of effects of random depant fluctuation and channel engineering in FD-SOI MOSFET and DG-FinFET using analytical models
Analytical models incorporating quantum mechanical effects for short n- channel mosfets
ATTACHE ASYMÉTRIQUE DE CRISTAUX PHONONIQUES (PNC) POUR UN RÉSONATEUR DE SYSTÈME MICRO-ÉLECTROMÉCANIQUE (MEMS) À RADIOFRÉQUENCE (RF) | ASYMMETRIC PHONONIC CRYSTAL (PNC) TETHERING FOR RADIO FREQUENCY (RF) MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) RESONATOR
INDIAN INSTITUTE OF TECHNOLOGY MADRAS ( INDIAN INSTITUTE OF TECHNOLOGY MADRAS)
IN
-
Patent No. :
WO2017154020A1
Filed :
12-01-2017
Published :
14-09-2017
Published
PROCÉDÉ DE VARIATION DE FRÉQUENCE DE RÉSONANCE DANS DES COMMUTATEURS À MICROSYSTÈME ÉLECTROMÉCANIQUE (MEMS) RADIO-FRÉQUENCE (RF) DE TYPE CAPACITIF | METHOD OF VARYING RESONANT FREQUENCY IN CAPACITANCE TYPE RADIO FREQUENCY (RF) MICRO-ELECTRO-MECHANICAL SYS
INDIAN INSTITUTE OF TECHNOLOGY MADRAS ( INDIAN INSTITUTE OF TECHNOLOGY MADRAS)
IN
-
Patent No. :
WO2017145175A2
Filed :
16-11-2016
Published :
31-08-2017
Published
ASYMMETRIC PHONONIC CRYSTAL (PNC) TETHERING FOR RADIO FREQUENCY (RF) MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) RESONATOR
INDIAN INSTITUTE OF TECHNOLOGY MADRAS.
-
Patent No. :
IN201641007928A
Filed :
07-03-2016
Published :
08-09-2017
Published
METHOD OF VARYING RESONANT FREQUENCY IN CAPACITANCE TYPE RADIO FREQUENCMICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) SWITCHES
INDIAN INSTITUTE OF TECHNOLOGY MADRAS
-
Patent No. :
IN201641006466A
Filed :
24-02-2016
Published :
25-08-2017
Published
Scholarly Publications
Design of a Piezoresistive MEMS Resonator Operating Beyond 1 GHz
Design and fabrication of 1 GHz lateral TPoS MEMS resonator for RF front end applications
Comparison of shallow interface traps in AlGaN/GaN MIS-devices with three different gate dielectrics
Prediction of IMD behaviour in LDMOS transistor amplifiers using a physics-based large signal compact model
10.1109/ICEmElec.2016.8074595
Crossref: 1
Simulation of Self-Heating and Bulk Trapping Effects on Drain Current Static and Transient Characteristics of AlGaN/GaN HEMTs
Charge Based Compact Modeling of Gate Leakage Mechanism in AlGaN/GaN HEMTs
Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric
SOI-LDMOS Transistors with optimized partial n+ buried layer for improved performance in power amplifier applications
Showing 9 to 16 of 172 publications