Nandita DasGupta
VIDWAN ID: 10244

Prof Nandita DasGupta

Female Doctor of Philosophy
Professor | Department of Electrical Engineering
Indian Institute of Technology, Madras
Tamil Nadu
Expertise: Electrical and Electronic Engineering
129 Publications
0 Projects
2028 Scopus Citations
1905 CrossRef
33 Years 4 Months Total Experience
Publications
129 Total
Articles
72
Books
1
Proceedings
56
Activity

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Scopus Scopus
2,028 Citations
21 h-index
CrossRef CrossRef
1,905 Citations
21 h-index
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Professional Recognition

Alexander von Humboldt Fellowship
1991
Alexander von Humboldt Foundation, Germany

Community & Membership

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Personal Details

Doctor of Philosophy
1988
Indian Maritime University
Professor
Apr 2006 – Present
Indian Institute of Technology, Madras | Department of Electrical Engineering
Associate Professor
Sep 2000 – Apr 2006
Indian Institute of Technology, Madras | Department of Electrical Engineering
Assistant Professor
May 1993 – Sep 2000
Indian Institute of Technology, Madras | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

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Peptide templates for robust functionalized polymer pores

University Indian Institute of Technology Madras
Year 2017
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Analysis and modeling of gate leakage current in iii

University Indian Institute of Technology Madras
Year 2015
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Study of thin dielectric on 4H-SiC for power devices

University Indian Institute of Technology Madras
Year 2013
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Scholarly Publications

Integrated optical ultra-broadband add-drop filter in silicon-on-insulator platform

Conference Paper
Year: 2018. Pages: 1-3 .

Gate Current Partitioning Model for Schottky Gate GaN HEMTs

Journal Article
IEEE Transactions on Electron Devices. Year: 2021. Volume: 68 , Issue: 1 , Pages: 425-429 .
Authors: Ankur Debnath; Sujan Sarkar; Khade Ramdas Pandurang; Nandita DasGupta; Amitava DasGupta

Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs

Conference Paper
Year: 2021.
Authors: Sruthi M P; Ajay Shanbhag; Anjan Chakravorty; Nandita DasGupta; Amitava DasGupta

Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs

Conference Paper
Year: 2021.
Authors: Ajay Shanbhag; Sruthi M P; Farid Medjdoub; Anjan Chakravorty; Nandita DasGupta; Amitava DasGupta

Optimization of C Doped Buffer Layer to Minimize Current Collapse in A10.83I n0.17N/GaN HEMT by Studying Drain Lag Transients

Conference Paper
Year: 2020.
Authors: Shankha Mukherjee; Srikanth Kanaga; Nandita DasGupta; Amitava DasGupta

Low temperature and high pressure oxidized Al2O3as gate dielectric for AlInN/GaN MIS-HEMTs

Journal Article
IEEE Transactions on Device and Materials Reliability. Year: 2020. Volume: 20 , Issue: 3 , Pages: 613-621 .
Authors: Srikanth Kanaga; Gourab Dutta; Bhuvnesh Kushwah; Nandita DasGupta; Amitava DasGupta

Deep-Level Traps in AlGaN/GaN- And AlInN/GaN-Based HEMTs with Different Buffer Doping Technologies

Journal Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 6 , Pages: 2304-2310 .
Authors: P. Vigneshwara Raja; Mohamed Bouslama; Sujan Sarkar; Khade Ramdas Pandurang; Jean-Christophe Nallatamby; Nandita DasGupta; Amitava DasGupta

Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique

Journal Article
Applied Surface Science. Year: 2020. Volume: 513 .
Authors: Subhojyoti Sinha; Gourab Dutta; Ramanjaneyulu Mannam; Nandita DasGupta; M.S. Ramachandra Rao
Showing 1 to 8 of 129 publications