Ministry of Education
Sandip Lashkare
VIDWAN ID: 442535

Dr Sandip Lashkare

Male
Assistant Professor (Grade-I) | Electrical Engineering
Indian Institute of Technology, Gandhinagar
Gujarat
Expertise: Electrical and Electronic Engineering
ORCID 0000-0003-2018-1681 Scopus 55342663700 ResearcherID AAV-3075-2020 Google Scholar INTGEgIAAAAJ
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20 Publications
0 Projects
446 Scopus Citations
442 CrossRef
2 Years 11 Months Total Experience
Publications
20 Total
Articles
8
Proceedings
12
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Scopus Scopus
446 Citations
11 h-index
CrossRef CrossRef
442 Citations
11 h-index
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Assistant Professor (Grade-I)
Oct 2023 – Present
Indian Institute of Technology, Gandhinagar | Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Epitaxial Si punch-through based selector for bipolar RRAM

Conference Paper
Year: 2012. Pages: 115-116 .
Authors: Bafna, P.; Karkare, P.; Srinivasan, S.; Chopra, S.; Lashkare, S.; Kim, Y.; Srinivasan, S.; Kuppurao, S.; Lodha, S.; Ganguly, U.
DOI 10.1109/DRC.2012.6256979 Crossref Crossref: 12 Scopus Scopus: 12

A case for multiple and parallel RRAMs as synaptic model for training SNNs

Conference Paper
Year: 2018. Volume: 2018-July .
Authors: Aditya Shukla; Sidharth Prasad; Sandip Lashkare; Udayan Ganguly
DOI 10.1109/IJCNN.2018.8489429 Crossref Crossref: 6 Scopus Scopus: 8

Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics

Journal Article
Neurocomputing. Year: 2018. Volume: 321 , Pages: 227-236 .
Authors: Anakha V Babu; Sandip Lashkare; Udayan Ganguly; Bipin Rajendran
DOI 10.1016/j.neucom.2018.09.019 Crossref Crossref: 14 Scopus Scopus: 13

A Compact PrMnO 3 Based Oscillator as an Alternative to CMOS Ring Oscillator in a Smart Temperature Sensor

Conference Paper
Year: 2018. Volume: 2018-October .
Authors: Sandip Lashkare; Pankaj Kumbhare; Vivek Saraswat; Shouri Chatterjee; Udayan Ganguly
DOI 10.1109/ICSENS.2018.8589573 Scopus Scopus: 3

Transient Joule Heating in PrMnO3 RRAM enables ReLU type Neuron

Conference Paper
Year: 2019.
Authors: S. Lashkare; A. Bhat; P. Kumbhare; U. Ganguly
DOI 10.1109/NVMTS.2018.8603101 Crossref Crossref: 6 Scopus Scopus: 5

Punchthrough-diode-based bipolar RRAM selector by Si epitaxy

Journal Article
IEEE Electron Device Letters. Year: 2012. Volume: 33 , Issue: 10 , Pages: 1396-1398 .
Authors: Srinivasan, V.S.S.; Chopra, S.; Karkare, P.; Bafna, P.; Lashkare, S.; Kumbhare, P.; Kim, Y.; Srinivasan, S.; Kuppurao, S.; Lodha, S.; Ganguly, U.
DOI 10.1109/LED.2012.2209394 Crossref Crossref: 89 Scopus Scopus: 88

Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM

Conference Paper
Year: 2012. Pages: 1-3 .
Authors: Lashkare, S.; Karkare, P.; Bafna, P.; Deshmukh, S.; Srinivasan, V.S.S.; Lodha, S.; Ganguly, U.
DOI 10.1109/ICEmElec.2012.6636237 Crossref Crossref: 2 Scopus Scopus: 3

Comparison of novel punch-through diode (NPN) selector with MIM selector for bipolar RRAM

Conference Paper
Year: 2012. Pages: 51-54 .
Authors: Deshmukh, S.; Mandapati, R.; Lashkare, S.; Borkar, A.; Srivinasan, V.S.S.; Lodha, S.; Ganguly, U.
DOI 10.1109/NVMTS.2013.6632861 Crossref Crossref: 2 Scopus Scopus: 6
Showing 1 to 8 of 20 publications