Ministry of Education
Krista R. Khiangte
VIDWAN ID: 329352

Dr Krista R. Khiangte

Male Doctor of Philosophy
Assistant Professor (Grade-I) | Physics
Indian Institute of Technology, Gandhinagar
Gujarat
Expertise: Applied Physics
ORCID 0000-0003-0294-7815 Scopus 57192690950 ResearcherID DWW-9259-2022 Google Scholar UmEbpvIAAAAJ
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22 Publications
0 Projects
171 Scopus Citations
166 CrossRef
4 Years Total Experience
Publications
22 Total
Articles
20
Proceedings
2
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Scopus Scopus
171 Citations
9 h-index
CrossRef CrossRef
166 Citations
9 h-index
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Personal Details

Doctor of Philosophy
2018
Indian Institute of Technology, Hyderabad
Master of Science
2012
Indian Institute of Technology, Hyderabad
Assistant Professor (Grade-I)
Sep 2022 – Present
Indian Institute of Technology, Gandhinagar | Physics
Physical Sciences
Applied Physics

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Scholarly Publications

Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS

Conference Paper
Year: 2018.
Authors: Shraddha Kothari; Jaswant S. Rathore; Krista R. Khiangte; Suddhasatta Mahapatra; Saurabh Lodha
DOI 10.1109/ICEE44586.2018.8937978 Scopus Scopus: 1

Dislocation density and strain-relaxation in Ge1− xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

Journal Article
Journal of Crystal Growth. Year: 2017.

Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy

Other
Year: 2018.
Authors: Khiangte, K.R.; Rathore, J.S.; Schmidt, J.; Osten, H.J.; Laha, A.; Mahapatra, S.

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd<inf>2</inf>O<inf>3</inf>(111)/Si (111) heterostructures

Other
Year: 2018.
Authors: Khiangte, K.R.; Rathore, J.S.; Das, S.; Pokharia, R.S.; Schmidt, J.; Osten, H.J.; Laha, A.; Mahapatra, S.

Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates

Other
Year: 2018.
Authors: Khiangte, K.R.; Rathore, J.S.; Sharma, V.; Laha, A.; Mahapatra, S.

Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles

Other
Year: 2018.
Authors: Bhunia, S.; Sarkar, R.; Nag, D.; Ghosh, K.; Khiangte, K.R.; Mahapatra, S.; Laha, A.

Explicit lattice parameter determination and Raman study of GeSn-epilayers on Ge/Gd2O3/Si(111) substrates

Journal Article
Semiconductor Science & Technology. Year: 2026. Volume: 41 , Issue: 5 , Pages: 055033 .
Authors: Tharundev V V; Dushyant Singh; Vigneshwari S R; Subha Maity; Krista R Khiangte
DOI 10.1088/1361-6641/ae6df4

Octahedral tilt–driven anisotropy and wasp-waisted hysteresis in canted antiferromagnetic LaFe(1-x)NixO3

Journal Article
Journal of Alloys and Compounds. Year: 2026. Volume: 1077 , Pages: 189520 .
Authors: Subha Maity; Dushyant Singh; Tarana Yadav; Tharundev VV; Vigneshwari SR; Abhisek Samanta; Krista R. Khiangte
DOI 10.1016/j.jallcom.2026.189520
Showing 1 to 8 of 22 publications