Indudhar Vali
VIDWAN ID: 320620

Prof Indudhar Vali

Male Doctor of Philosophy
Assistant Professor | Department of Science and Humanities
PES UNIVERSITY, BANGLORE
Karnataka
Expertise: Applied Physics
10 Publications
0 Projects
201 Scopus Citations
187 CrossRef
6 Years 6 Months Total Experience
Publications
10 Total
Articles
10
Activity

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Scopus Scopus
201 Citations
7 h-index
CrossRef CrossRef
187 Citations
7 h-index
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Professional Recognition

IOP Trusted Reviewer Badge
2020
IOP
T. M. A. Pai Fellowship
2015
Manipal Acdemy of Higher Education

Community & Membership

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Personal Details

Doctor of Philosophy
2020
ICMR RMRC,NE, DIBRUGARH
Assistant Professor
Oct 2022 – Present
PES UNIVERSITY, BANGLORE | Department of Science and Humanities
Assistant Professor
Mar 2020 – Sep 2022
Unknown Organization
Physical Sciences
Applied Physics

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Scholarly Work

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Scholarly Publications

Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions

Open Access
Journal Article
SILICON. Year: 2021. Volume: 14 , Issue: 7 , Pages: 3785-3794 .
Authors: Indudhar Panduranga Vali; Rashmitha Keshav; M. Rajeshwari; K. S. Vaishnavi; M. G. Mahesha; Pramoda Kumara Shetty

Thermal neutron irradiation effects on structural and electrical properties of n-type 4H‒SiC

Open Access
Journal Article
Journal of Materials Science: Materials in Electronics. Year: 2020. Volume: 31 , Issue: 11 , Pages: 8496-8501 .
Authors: Indudhar Panduranga Vali; Pramoda Kumara Shetty; M. G. Mahesha; Mala N. Rao; Swayam Kesari

Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Journal Article
Vacuum. Year: 2020. Volume: 172 , Pages: 109068 .
Authors: Indudhar Panduranga Vali; Pramoda Kumara Shetty; M.G. Mahesha; V.C. Petwal; Jishnu Dwivedi; D.M. Phase; R.J. Choudhary

I - V characterization of vacuum deposited zinc selenide - Silicon hetero junction

Journal Article
Year: 2020.
Authors: Keshav, R.; Vali, I.P.; Shetty, P.K.; Vaishnavi, K.S.; Rajeshwari, M.; Mahesha, M.G.

Structural and optical studies of gamma irradiated N-doped 4H-SiC

Journal Article
Authors: Vali, I.P.; Shetty, P.K.; Mahesha, M.G.; Sathe, V.G.; Phase, D.M.; Choudhary, R.J.

Gamma irradiation effects on Al/n-Si Schottky junction properties

Journal Article
Authors: Vali, I.P.; Shetty, P.K.; Mahesha, M.G.; Keshav, R.; Sathe, V.G.; Phase, D.M.; Choudhary, R.J.

Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Journal Article
Microelectronics Reliability. Year: 2018. Volume: 91 , Pages: 179-184 .
Authors: Vali, I.P.; Shetty, P.K.; Mahesha, M.G.; Petwal, V.C.; Dwivedi, J.; Phase, D.M.; Choudhary, R.J.

Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Journal Article
Applied Surface Science. Year: 2017. Volume: 407 , Pages: 171-176 .
Authors: Vali, I.P.; Shetty, P.K.; Mahesha, M.G.; Petwal, V.C.; Dwivedi, J.; Choudhary, R.J.
Showing 1 to 8 of 10 publications