Ministry of Education
Taraprasanna Dash
VIDWAN ID: 294845

Dr Taraprasanna Dash

Male Doctor of Philosophy
Associate Professor
Siksha 'O' Anusandhan (2021 - 2023)
Odisha
Expertise: Nanoscience and Nanotechnology
ORCID 0000-0001-6370-8573 Scopus 57189380550 ResearcherID Z-4311-2019 Google Scholar Yjk6k2wAAAAJ
View older version My Dashboard
128 Publications
0 Projects
704 Scopus Citations
563 CrossRef
13 Years 8 Months Total Experience
Publications
128 Total
Articles
54
Books
2
Chapters
6
Proceedings
66
Activity

No publication activity to display.

Scopus Scopus
704 Citations
12 h-index
CrossRef CrossRef
563 Citations
12 h-index
Google Scholar Google Scholar

Loading Scholar statistics...

Professional Recognition

No Data Found

There is currently nothing to display here.

Community & Membership

No Data Found

There is currently nothing to display here.

IEEE
Senior
Jan 2020

Personal Details

Doctor of Philosophy
2019
Maharaja Sriram Chandra Bhanja Deo University
Master of Technology
2012
N/A
Associate Professor
Nov 2021 – Mar 2023
Siksha 'O' Anusandhan
Assistant Professor
Apr 2012 – Mar 2023
Siksha 'O' Anusandhan
Lecturer
Aug 2009 – Apr 2012
Gandhi Institute of Technology & Management (GITAM) University, Visakhapatnam
Engineering and Technology
Nanoscience and Nanotechnology

Related Profiles

Organisation (0)

No Data Found

There is currently nothing to display here.

Scholarly Work

No Data Found

There is currently nothing to display here.

Design and Simulation of Strain Engineered AlGaN/GaN and Vertical Superjunction HEMTs for Power Electronics Applications

University Siksha O Anusandhan
Year 2024
Downloads 0
No Data Found

There is currently nothing to display here.

Scholarly Publications

Stress Tuning in NanoScale FinFETs at 7nm

Conference Paper
Year: 2018. Pages: 166-170 .
Authors: Dash, T.P.; Dey, S.; Das, S.; Mohaptra, E.; Jena, J.; Maiti, C.K.
DOI 10.1109/EDKCON.2018.8770517 Crossref Crossref: 3 Scopus Scopus: 4

Study of strained-Si/SiGe channel p-MOSFETs Using TCAD

Journal Article
Year: 2018. Pages: 181-188 .
Authors: Das, S.; Dash, T.P.; Nanda, R.K.; Maiti, C.K.
DOI 10.1007/978-981-10-5565-2_16 Scopus Scopus: 2

Variability Due to Orientation Dependent Oxide Thickness in SOI-FinFETs

Conference Paper
Year: 2018. Pages: 152-156 .
Authors: Dey, S.; Dash, T.P.; Das, S.; Jena, J.; Mohapatra, E.; Maiti, C.K.
DOI 10.1109/EDKCON.2018.8770390

Assessment of heterojunction SiGe tunnel-FET for low-power digital circuits

Conference Paper
Year: 2017. Pages: 336-340 .
Authors: C. K. Maiti; T. P. Dash; S. Das
DOI 10.1109/DEVIC.2017.8073964

Simulation of single-event upset in power MOSFETs

Conference Paper
Year: 2017. Pages: 25-29 .
Authors: C. K. Maiti; T. P. Dash
DOI 10.1109/DEVIC.2017.8073899 Crossref Crossref: 3 Scopus Scopus: 3

Performance enhancement of FinFETs at low temperature

Conference Paper
Year: 2017. Pages: 35-39 .
Authors: C. K. Maiti; T. P. Dash; S. Dey
DOI 10.1109/DEVIC.2017.8073901 Crossref Crossref: 1 Scopus Scopus: 1

Technology CAD simulations of hot-carrier degradation in strained-Si p-MOSFETs

Conference Paper
Year: 2017. Pages: 331-335 .
Authors: C. K. Maiti; S. Das; T. P. Dash
DOI 10.1109/DEVIC.2017.8073963 Scopus Scopus: 1

Electron mobility modeling in strained-Si n-MOSFETs using TCAD

Conference Paper
Year: 2017. Pages: 1-4 .
Authors: Dash, T.P.; Pradhan, D.; Das, S.; Nanda, R.K.
DOI 10.1109/INDICON.2016.7839160 Crossref Crossref: 7 Scopus Scopus: 8
Showing 25 to 32 of 128 publications