Growth and characterization of some TMDC compound semiconductor thin films for their applications in Schottky barrier devices
Completed
Agency: University Grants CommissionRole: Other
Metal-Semiconductor interfaces
Completed
Agency: University Grants CommissionRole: Other
Studies on conduction mechanisms of tungsten diselenide based Schottky diodes
UniversitySardar Patel University
Year2008
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Studies on MoSe2 based Schottky barrier, MESFET and Heterojunction devices
UniversitySardar Patel University
Year2008
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Studies on Schottky barrier devices prepared from well characterized tungsten diselenide crystals grown by DVT technique
UniversitySardar Patel University
Year2009
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Growth and characterization of zinc monochalcogenide crystals and thin films
UniversitySardar Patel University
Year2011
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Studies on well characterized thermally evaporated SnSe thin films for Schottky barrier device application
UniversitySardar Patel University
Year2012
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Development of scintillation Gamma Ray spectrometers for planetary missions and methodological investigations of infrared stimulated luminescence signals from FELDSPARS
UniversitySardar Patel University
Year2018
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Design and synthesis of nanostructured TMDC based heterojunctions for photoresponse and catalytic applications
UniversitySardar Patel University
Year2021
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Application of well characterized e-beam evaporated WSe2 thin films in Schottky barrier diodes
UniversitySardar Patel University
Year2011
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Growth and characterization of nanocrystalline p-SnSe thin films for its use in p-SnSe/n-MoSe2 heterojunction diode
UniversitySardar Patel University
Year2015
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Scholarly Publications
Synthesis and characterization of 2-hydroxy-4-methoxyacetophenoneurea-formaldehyde resins and their ion-exchange properties