Ministry of Education
Vimala P
VIDWAN ID: 168115

Dr Vimala P

Female Doctor of Philosophy
Professor | Department of Electronics and Communication Engineering
Dayananda Sagar College of Engineering, BANGALORE
Expertise: Nanoscience and Nanotechnology
ORCID 0000-0002-8247-6621 Scopus 55608614000 ResearcherID AAA-3621-2019 Google Scholar 0urYCgUAAAAJ
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155 Publications
3 Projects
758 Scopus Citations
695 CrossRef
15 Years 1 Month Total Experience
Publications
155 Total
Articles
86
Books
1
Chapters
12
Proceedings
56
Activity

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Scopus Scopus
758 Citations
16 h-index
CrossRef CrossRef
695 Citations
15 h-index
Google Scholar Google Scholar

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Professional Recognition

IEI Young Engineer Award
2017
IEI
Women Scientist Fellowship (WOS-A
2011
Department of Science and Technology
Best Researcher Award 2022
2023
Dayananda Sagar College of Engineering
Research Excellence Award
2025
Dayananda Sagar College of Engineering

Community & Membership

Board of Studies, Department of Electronics and Communication Engineering, Vivekananda Col
Member
Jan 2016
Board of Studies, Department of Electronics and Communication Engineering, Dayananda Sagar
Member
Jan 2016
IETE
Fellow
IEEE
Senior Member
IEI
Member
ISTE
Life Member

Personal Details

Doctor of Philosophy
2014
N/A
Master of Engineering
2007
Sultan Qaboos University, Muscat
Bachelor of Engineering
2005
Sultan Qaboos University, Muscat
Professor
May 2022 – Present
Dayananda Sagar College of Engineering, BANGALORE | Department of Electronics and Communication Engineering
Associate Professor
Oct 2015 – Apr 2022
Dayananda Sagar College of Engineering, BANGALORE | Department of Electronics and Communication Engineering
Assistant Professor
Jul 2014 – Sep 2015
Dayananda Sagar College of Engineering, BANGALORE
Scientist A
Dec 2011 – Jun 2014
Thiagarajar College of Engineering, Madurai
Lecturer
Jul 2008 – Oct 2008
K.L.N. College of Engineering Pottapalayam, Sivagangai Dist
Engineering and Technology
Nanoscience and Nanotechnology

Related Profiles

Scholarly Work

Analytical Modeling and Simulation of Triple Material Surrounding Gate (TMSG) TFET
Completed
Agency: Department of Science and Technology Role: Other
Amount: ₹16.90 Lac
Duration: 2018 – 2020
Physics Based Modeling Simulation and Electrical Characterization of Quantum Effects in Multigate MOSFETs
Completed
Role: Principal Investigator
Amount: ₹17 Lac
Duration: 2016 – 2019
Analytical Modeling and Simulation of Quantum Mechanical effects in Multigate MOSFETs
Completed
Agency: Department of Science and Technology Role: Principal Investigator
Amount: ₹251
Duration: 2011 – 2014

Modeling Simulation And Analysis of Gate Engineered Heterojunction GAA TFET

University Visvesvaraya Technological University
Year 2020
Downloads 0

DOUBLE-GATE TUNNEL FIELD EFFECT TRANSISTOR FOR THE BREAST CANCER CELLS DETECTION

Dayananda Sagar College of Engineering
- Application No. : 202341083357 A Filed : 07-12-2023
Published : 05-01-2024 Published

A Multilayer Gate Metal Oxide semiconductor FET for reducing short channel effect

Vimala Palanichamy;Suveetha Dhanaselvam Ponniah;Nirmal David;Arun Samuel Thankamony Sarasam
- Application No. : 202041019570 A Filed : 08-05-2020
Published : 29-05-2020 Granted

Scholarly Publications

Modeling the Centroid and Charge density in Double Gate MOSFETs including Quantum Effects

Conference Paper
Year: 2011.

A compact quantum model for cylindrical surrounding gate MOSFETs using high-k dielectrics

Open Access
Journal Article
Journal of Electrical Engineering & Technology. Year: 2014. Volume: 9 , Issue: 2 , Pages: 649-654 .
Authors: Vimala, P.; Balamurugan, N.B.
DOI 10.5370/JEET.2014.9.2.649 Crossref Crossref: 5 Scopus Scopus: 6

Analytical modeling of quantization effects in surrounding-gate MOSFETs

Journal Article
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. Year: 2014. Volume: 33 , Issue: 1/2 , Pages: 630-644 .
Authors: Palanichamy, V.; Balamurugan, N.B.
DOI 10.1108/COMPEL-03-2013-0101 Crossref Crossref: 7 Scopus Scopus: 18

Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects

Open Access
Journal Article
Journal of Semiconductors. Year: 2014. Volume: 35 , Issue: 3 , Pages: 034001 .
Authors: Vimala, P.; Balamurugan, N.B.
DOI 10.1088/1674-4926/35/3/034001 Crossref Crossref: 15 Scopus Scopus: 19

New analytical model for nanoscale tri-Gate SOI MOSFETs including quantum effects

Open Access
Journal Article
IEEE Journal of the Electron Devices Society. Year: 2014. Volume: 2 , Issue: 1 , Pages: 1-7 .
Authors: Vimala, P.; Balamurugan, N.B.
DOI 10.1109/JEDS.2014.2298915 Crossref Crossref: 19 Scopus Scopus: 21

Analytical modeling of drain current, capacitance and transconductance in symmetric double-gate mosfets considering quantum effects

Journal Article
International Journal of Nanoscience. Year: 2013. Volume: 12 , Issue: 01 , Pages: 1350005 .
Authors: Palanichamy, V.; Balamurugan, N.B.
DOI 10.1142/S0219581X13500051 Crossref Crossref: 3 Scopus Scopus: 3

Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects

Open Access
Journal Article
Journal of Semiconductors. Year: 2013. Volume: 34 , Issue: 11 , Pages: 114001 .
Authors: Vimala, P.; Balamurugan, N.B.
DOI 10.1088/1674-4926/34/11/114001 Crossref Crossref: 13 Scopus Scopus: 15

Modeling the inversion charge centroid in Tri-Gate MOSFETs including quantum effects

Conference Paper
Year: 2013. Pages: 1-4 .
Authors: Vimala, P.; Balamurugan, N.B.
DOI 10.1109/ICEVENT.2013.6496577
Showing 9 to 16 of 155 publications