Niladri Pratap Maity
VIDWAN ID: 110710

Dr Niladri Pratap Maity

Male Doctor of Philosophy
Associate Professor | Department of Electronics and Communication Engineering
Mizoram University, Aizwal
Mizoram
Expertise: Electrical and Electronic Engineering
112 Publications
0 Projects
1073 Scopus Citations
950 CrossRef
19 Years 7 Months Total Experience
Publications
112 Total
Articles
83
Books
1
Chapters
2
Proceedings
26
Activity

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Scopus Scopus
1,073 Citations
19 h-index
CrossRef CrossRef
950 Citations
18 h-index
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Personal Details

Doctor of Philosophy
2015
South Asian University
Associate Professor
Feb 2007 – Present
Mizoram University, Aizwal | Department of Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

High-k HFO 2 based metal-oxide-semiconductor devices using silicon and silicon carbide semiconductor

Journal Article
Year: 2011. Volume: 3 , Issue: 1 PART5 , Pages: 947-955 .

Propagation characteristics of surface plasmon waves on Au, Ag and Al at optical wavelengths

Journal Article
Year: 2011. Volume: 3 , Issue: 1 PART5 , Pages: 1010-1020 .

Silicon and silicon carbide based metal-oxide- semiconductor devices using HfO 2 and SiO 2 gate dielectric

Journal Article
Year: 2011. Volume: 6 , Issue: 3 , Pages: 391-399 .

Ultra thin body partial silicon-on-insulator MOSFET with suppressed floating body effect: A simulation study

Journal Article
Journal of Nanoelectronics and Optoelectronics. Year: 2017. Volume: 12 , Issue: 5 , Pages: 472-479 .
Authors: N. P. Maity; Reshmi Maity; S. Baishya

Influence of image force effect on tunneling current density for high-k material ZrO2 ultra thin films based MOS devices

Journal Article
Journal of Nanoelectronics and Optoelectronics. Year: 2017. Volume: 12 , Issue: 1 , Pages: 67-71 .
Authors: N. P. Maity; Reshmi Maity; S. Baishya

Analysis of interface charge densities for high-k dielectric materials based metal oxide semiconductor devices

Journal Article
International Journal of Nanoscience. Year: 2016. Volume: 15 , Issue: 5-6 .
Authors: N. P. Maity; R. R. Thakur; Reshmi Maity; R. K. Thapa; S. Baishya

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Journal Article
Superlattices and Microstructures. Year: 2016. Volume: 95 , Pages: 24-32 .
Authors: Niladri Pratap Maity; Reshmi Maity; R.K. Thapa; Srimanta Baishya

Lumped Electromechanical Modeling of Capacitive Micromachined Ultrasonic Transducers

Conference Paper
Materials Today: Proceedings. Year: 2016. Volume: 3 , Issue: 6 , Pages: 2289-2294 .
Authors: R. Maity; Ajay Singh; A. Islam; N.P. Maity; R.K. Thapa; S. Baishya
Showing 1 to 8 of 112 publications