Ministry of Education
Niladri Pratap Maity
VIDWAN ID: 110710

Dr Niladri Pratap Maity

Male Doctor of Philosophy
Associate Professor | Department of Electronics and Communication Engineering
Mizoram University, Aizwal
Mizoram
Expertise: Electrical and Electronic Engineering
Scopus 8649290400
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112 Publications
0 Projects
1073 Scopus Citations
950 CrossRef
19 Years 7 Months Total Experience
Publications
112 Total
Articles
83
Books
1
Chapters
2
Proceedings
26
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Scopus Scopus
1,073 Citations
19 h-index
CrossRef CrossRef
950 Citations
18 h-index
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Personal Details

Doctor of Philosophy
2015
South Asian University
Associate Professor
Feb 2007 – Present
Mizoram University, Aizwal | Department of Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Publications

Analysis of frequency response behaviour of capacitive micromachined ultrasonic transducers

Journal Article
Journal of Computational and Theoretical Nanoscience. Year: 2015. Volume: 12 , Issue: 10 , Pages: 3492-3494 .
Authors: R. Maity; N. P. Maity; R. K. Thapa; S. Baishya
DOI 10.1166/jctn.2015.4227 Crossref Crossref: 4 Scopus Scopus: 8

Image force effect on tunneling current for ultra thin high-K dielectric material Al2O3 based metal oxide semiconductor devices

Journal Article
Journal of Nanoelectronics and Optoelectronics. Year: 2015. Volume: 10 , Issue: 5 , Pages: 645-648 .
Authors: N. P. Maity; R. Maity; R. K. Thapa; S. Baishya
DOI 10.1166/jno.2015.1812 Crossref Crossref: 26 Scopus Scopus: 25

Analytical characterization and simulation of a 2-D capacitive micromachined ultrasonic transducer array element

Journal Article
Journal of Computational and Theoretical Nanoscience. Year: 2015. Volume: 12 , Issue: 10 , Pages: 3692-3696 .
Authors: R. Maity; N. P. Maity; R. K. Thapa; S. Baishya
DOI 10.1166/jctn.2015.4261 Crossref Crossref: 5 Scopus Scopus: 9

Effect of image force on tunneling current for ultra thin oxide layer based metal oxide semiconductor devices

Journal Article
Nanoscience and Nanotechnology Letters. Year: 2015. Volume: 7 , Issue: 4 , Pages: 331-333 .
Authors: N. P. Maity; R. Maity; R. K. Thapa; S. Baishya
DOI 10.1166/nnl.2015.1970 Crossref Crossref: 11 Scopus Scopus: 12

Interface Charge Density Measurement for Ultra Thin ZrO2 Material Based MOS Devices Using Conductance Method

Open Access
Conference Paper
Procedia Computer Science. Year: 2015. Volume: 57 , Pages: 761-765 .
Authors: N.P. Maity; R.R. Thakur; Reshmi Maity; R.K. Thapa; S. Baishya
DOI 10.1016/j.procs.2015.07.472 Crossref Crossref: 8 Scopus Scopus: 11

Analysis of Interface Charge Using Capacitance-Voltage Method for Ultra Thin HfO2 Gate Dielectric Based MOS Devices

Open Access
Conference Paper
Procedia Computer Science. Year: 2015. Volume: 57 , Pages: 757-760 .
Authors: N.P. Maity; R.R. Thakur; Reshmi Maity; R.K. Thapa; S. Baishya
DOI 10.1016/j.procs.2015.07.470 Crossref Crossref: 14 Scopus Scopus: 17

Study of interface charge densities for ZrO2 and HfO2 based metal-oxide-semiconductor devices

Open Access
Journal Article
Advances in Materials Science and Engineering. Year: 2014. Volume: 2014 .
Authors: N. P. Maity; Reshmi Maity; R. K. Thapa; S. Baishya
DOI 10.1155/2014/497274 Crossref Crossref: 27 Scopus Scopus: 32

Comparison of different high-k dielectric materials in MOS device from C-V characteristics

Open Access
Conference Paper
Advanced Materials Research. Year: 2013. Volume: 816-817 , Pages: 60-64 .
Authors: Niladri Pratap Maity; R.K. Thapa; S. Baishya
DOI 10.4028/www.scientific.net/AMR.816-817.60 Crossref Crossref: 10 Scopus Scopus: 8
Showing 9 to 16 of 112 publications