Ministry of Education
Nandita DasGupta
VIDWAN ID: 10244

Prof Nandita DasGupta

Female Doctor of Philosophy
Professor | Department of Electrical Engineering
Indian Institute of Technology, Madras
Tamil Nadu
Expertise: Electrical and Electronic Engineering
ORCID 0000-0001-8495-9398 Scopus 7005156391 ResearcherID C-5092-2013
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129 Publications
0 Projects
2028 Scopus Citations
1905 CrossRef
33 Years 4 Months Total Experience
Publications
129 Total
Articles
72
Books
1
Proceedings
56
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Scopus Scopus
2,028 Citations
21 h-index
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1,905 Citations
21 h-index
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Professional Recognition

Alexander von Humboldt Fellowship
1991
Alexander von Humboldt Foundation, Germany

Community & Membership

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Personal Details

Doctor of Philosophy
1988
Indian Maritime University
Professor
Apr 2006 – Present
Indian Institute of Technology, Madras | Department of Electrical Engineering
Associate Professor
Sep 2000 – Apr 2006
Indian Institute of Technology, Madras | Department of Electrical Engineering
Assistant Professor
May 1993 – Sep 2000
Indian Institute of Technology, Madras | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Co-Authors (27)

Prof Shreepad Karmalkar
Prof Shreepad Karmalkar Indian Institute of Technology, Madras
Prof Lalit Mohan Kukreja
Prof Lalit Mohan Kukreja Suresh Gyan Vihar Univeristy, Jaipur
Dr Enakshi Bhattacharya
Dr Enakshi Bhattacharya Indian Institute of Technology, Madras
Prof M. R. Ravi
Prof M. R. Ravi Indian Institute of Technology, Delhi
Prof M S Ramachandra Rao
Prof M S Ramachandra Rao Indian Institute of Technology, Madras
Prof Amitava Das Gupta
Prof Amitava Das Gupta Indian Institute of Technology, Madras
Prof Bijoy Krishna Das
Prof Bijoy Krishna Das Indian Institute of Technology, Madras
Dr Boby George
Dr Boby George Indian Institute of Technology, Madras
Prof Shanti Bhattacharya
Prof Shanti Bhattacharya Indian Institute of Technology, Madras
Prof Krishnan Balasubramanian
Prof Krishnan Balasubramanian Indian Institute of Technology, Madras
Dr A Balamurugan Murugan
Dr A Balamurugan Murugan Bharathiar University, Coimbatore
Prof Anjan Chakravorty
Prof Anjan Chakravorty Indian Institute of Technology, Madras
Dr Deleep R Nair
Dr Deleep R Nair N/A
Dr Rathnamala Rao
Dr Rathnamala Rao National Institute of Technology, Karnataka
Dr Mannam Ramanjaneyulu
Dr Mannam Ramanjaneyulu Vignan's Foundation of Science, Technology & Research, Guntur
Dr Binsu J Kailath
Dr Binsu J Kailath Indian Institute of Information Technology, Design & Manufacturing, Kancheepuram
Dr Selvi K
Dr Selvi K Thiagarajar College of Engineering, Madurai
Dr Gourab Dutta
Dr Gourab Dutta Indian Institute of Technology, Kharagpur
Prof Jyotirmoy Chatterjee
Prof Jyotirmoy Chatterjee Indian Institute of Technology, Kharagpur
Dr Nikhil K. S.
Dr Nikhil K. S. National Institute of Technology, Karnataka
Dr Kumar E
Dr Kumar E Tamil Nadu Open University, Chennai
Dr Shubra Singh
Dr Shubra Singh N/A
Dr Thirunavukkarasu Kandasamy
Dr Thirunavukkarasu Kandasamy Vel Tech Rangarajan Dr. Sagunthala R & D Institute of Science & Technology, Chennai
Dr Subhojyoti Sinha
Dr Subhojyoti Sinha SRM Institute of Science and Technology
Dr Senthil Kumar E
Dr Senthil Kumar E SRM Institute of Science and Technology
Prof T Sundararajan
Prof T Sundararajan Indian Institute of Technology, Palakkad
Dr Vigneshwara Raja P.
Dr Vigneshwara Raja P. Indian Institute of Technology, Dharwad

Scholarly Work

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Peptide templates for robust functionalized polymer pores

University Indian Institute of Technology Madras
Year 2017
Downloads 0

Analysis and modeling of gate leakage current in iii

University Indian Institute of Technology Madras
Year 2015
Downloads 0

Study of thin dielectric on 4H-SiC for power devices

University Indian Institute of Technology Madras
Year 2013
Downloads 0
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Scholarly Publications

Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer

Journal Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 8 , Pages: 4408-4413 .
Authors: Sujan Sarkar; Ramdas P. Khade; Ajay Shanbhag; Nandita DasGupta; Amitava DasGupta
DOI 10.1109/TED.2022.3181539 Crossref Crossref: 14 Scopus Scopus: 14

Effect of GaN cap layer on the performance of AlInN/GaN-based HEMTs

Journal Article
Microelectronic Engineering. Year: 2022. Volume: 258 .
Authors: Sujan Sarkar; Ramdas P. Khade; Amitava DasGupta; Nandita DasGupta
DOI 10.1016/j.mee.2022.111756 Crossref Crossref: 30 Scopus Scopus: 29

Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

Journal Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 3 , Pages: 999-1005 .
Authors: Ajay Shanbhag; M. P. Sruthi; Anjan Chakravorty; Nandita DasGupta; Amitava DasGupta
DOI 10.1109/TED.2022.3145334 Crossref Crossref: 18 Scopus Scopus: 19

Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors

Conference Paper
Year: 2022. Pages: 78-81 .
Authors: Farzana Yasmin; Anjan Chakravorty; Nandita DasGupta; Amitava DasGupta
DOI 10.1109/BCICTS53451.2022.10051753

Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs

Conference Paper
Year: 2022. Pages: 33-36 .
Authors: Sruthi M P; Nidhin K; Ajay Shanbhag; Deleep R Nair; Anjan Chakravorty; Nandita DasGupta; Amitava Das Gupta
DOI 10.1109/BCICTS53451.2022.10051754

Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

Journal Article
Journal of Applied Physics. Year: 2021. Volume: 130 , Issue: 20 .
Authors: Ramdas P. Khade; Sujan Sarkar; Amitava DasGupta; Nandita DasGupta
DOI 10.1063/5.0066036 Crossref Crossref: 8 Scopus Scopus: 9

Group-V impurities induced native point defects and related visible luminescence in pulsed-laser-deposited ZnO thin films

Journal Article
Journal of Materials Science: Materials in Electronics. Year: 2025. Volume: 36 , Issue: 26 .
Authors: Ramanjaneyulu Mannam; Senthil Kumar Eswaran; F. Bellarmine; Nandita DasGupta; M. S. Ramachandra Rao
DOI 10.1007/s10854-025-15799-4 Crossref Crossref: 1 Scopus Scopus: 1

Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs

Open Access
Journal Article
IEEE Journal of the Electron Devices Society. Year: 2025. Volume: 13 , Pages: 615-624 .
Authors: Soumen Deb; Amitava DasGupta; Nandita DasGupta
DOI 10.1109/JEDS.2025.3588675 Crossref Crossref: 2 Scopus Scopus: 2
Showing 25 to 32 of 129 publications