Ministry of Education
Subindu Kumar
VIDWAN ID: 97567

Prof Subindu Kumar

Male Doctor of Philosophy
Professor | Department of Electronics Engineering
Indian Institute of Technology (Indian School of Mines), Dhanbad
Jharkhand
Expertise: Electrical and Electronic Engineering
ORCID 0000-0001-9037-0977 Scopus 57194761870 ResearcherID FFW-2106-2022 Google Scholar lmCnOYMAAAAJ
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52 Publications
0 Projects
298 Scopus Citations
248 CrossRef
3 Years 1 Month Total Experience
Publications
52 Total
Articles
33
Chapters
1
Proceedings
18
Activity

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Scopus Scopus
298 Citations
10 h-index
CrossRef CrossRef
248 Citations
8 h-index
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Professional Recognition

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Personal Details

Doctor of Philosophy
2009
N/A
Professor
Aug 2023 – Present
Indian Institute of Technology (Indian School of Mines), Dhanbad | Department of Electronics Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Unusual changes observed in the photoluminescence of annealed In<sub>x</sub>Ga<sub>1 - x</sub>N/GaN quantum wells explained

Journal Article
Materials Letters. Year: 2007. Volume: 61 , Issue: 30 , Pages: 5282-5284 .
Authors: Biswas, D.; Kumar, S.; Das, T.
DOI 10.1016/j.matlet.2007.04.052 Crossref Crossref: 5 Scopus Scopus: 9

Interdiffusion induced changes in the photoluminescence of In <sub>X</sub>Ga<sub>1-X</sub>As/GaAs quantum dots interpreted

Journal Article
Journal of Applied Physics. Year: 2007. Volume: 101 , Issue: 2 , Pages: 026108 .
Authors: Biswas, D.; Kumar, S.; Das, T.
DOI 10.1063/1.2430510 Crossref Crossref: 14 Scopus Scopus: 15

Effects of shape, dimension and interdiffusion on the photoluminescence of III-V semiconductor quantum dots

Conference Paper
Year: 2007. Pages: 894-896 .
Authors: Kumar, S.; Kabi, S.; Biswas, D.
DOI 10.1109/IWPSD.2007.4472666 Crossref Crossref: 1

Effects of interdiffusion on the Photoluminescence of ternary and quaternary semiconductor nanostructures interpreted

Conference Paper
Year: 2007. Pages: 450-452 .
Authors: Das, T.; Kumar, S.; Biswas, D.
DOI 10.1109/IWPSD.2007.4472546

Effects of a Gaussian size distribution on the absorption spectra of III-V semiconductor quantum dots

Journal Article
Journal of Applied Physics. Year: 2007. Volume: 102 , Issue: 8 , Pages: 084305 .
Authors: Kumar, S.; Biswas, D.
DOI 10.1063/1.2798986 Crossref Crossref: 24 Scopus Scopus: 31

Band offsets of In<sub>X</sub>Ga<sub>1-X</sub>N/GaN quantum wells reestimated

Journal Article
Thin Solid Films. Year: 2007. Volume: 515 , Issue: 10 , Pages: 4488-4491 .
Authors: Biswas, D.; Kumar, S.; Das, T.
DOI 10.1016/j.tsf.2006.07.139 Crossref Crossref: 21 Scopus Scopus: 24

Further support to the large band gap 1.95 eV of InN

Conference Paper
Year: 2008.
Authors: Kabi, S.; Kumar, S.; Biswas, D.; Das, T.

Analysis of nanoscale strained-Si/SiGe MOSFETs including source/drain series resistance through a multi-iterative technique

Conference Paper
Year: 2014. Pages: 427-432 .
Authors: Kumari, A.; Kumar, S.
DOI 10.1109/VLSID.2014.80 Crossref Crossref: 3 Scopus Scopus: 3
Showing 1 to 8 of 52 publications