Direct growth of preferential (100) oriented Aluminium Nitride (AIN) thin films on conducting boron doped nanocrystalline diamond (B-NCD) films without using any buffer layer
IIT Madras
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Patent No. :
569327
Filed :
09-11-2021
Published :
30-07-2025
Granted
Method to Realize Highly a-axis Oriented Aluminium Nitride (AlN) Thin films on Mo Coated Si substrate by Reactive RF Magnetron Sputtering
IIT Madras
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Patent No. :
425409
Filed :
24-07-2020
Published :
16-03-2023
Granted
Process Optimization for the growth of Large area Pulsed Laser Deposition (PLD) Grown
IIT Madras
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Patent No. :
458560
Filed :
02-08-2017
Published :
12-10-2023
Granted