RAVINDRA KUMAR MAURYA
VIDWAN ID: 678957

Dr RAVINDRA KUMAR MAURYA

Male Doctor of Philosophy
Assistant Professor
MIT Art, Design and Technology University, Pune
Maharashtra
Expertise: Nanoscience and Nanotechnology
15 Publications
0 Projects
159 Scopus Citations
160 CrossRef
2 Years 1 Month Total Experience
Publications
15 Total
Articles
13
Proceedings
2
Activity

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Scopus Scopus
159 Citations
6 h-index
CrossRef CrossRef
160 Citations
6 h-index
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Professional Recognition

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IEEE
EDS
Jan 2019

Personal Details

Doctor of Philosophy
2024
N/A
Assistant Professor
Jul 2026 – Present
MIT Art, Design and Technology University, Pune
Adhoc Faculty
Aug 2024 – Jul 2026
Veermata Jijabai Technological Institute Matunga Mumbai | Department of Electrical Engineering
Engineering and Technology
Nanoscience and Nanotechnology

Related Profiles

Scholarly Work

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A Negative Capacitance Junctionless Vertical Thin Body Field-effect Transistor (VSTB) Device

Ravindra Kumar Maurya
Radhe G. Debnath
Pragati Singh
- Application No. : 202531014540 Filed : 25-10-2025
Published : 30-11--0001 Filed

A System for Developing and Analyzing a Parameter of Bohm Quantum Potential (BQP) Device

Ravindra Kumar Maurya
Brinda Bhowmick
Rajesh Saha
- Application No. : 202022105580 Filed : 19-04-2022
Published : 30-11--0001 Granted

Scholarly Publications

Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET

Journal Article
Year: 2023. Volume: 139 , Pages: 105892 .
Authors: Maurya, R.K.; Kumar, V.; Saha, R.; Bhowmick, B.

Effects of Ferro-thickness and Temperature on Electrical Performance of Si:HfO<sub>2</sub>based NC-FinFET

Conference Paper
Year: 2023. Pages: 1-6 .
Authors: Maurya, R.K.; Kumar, V.; Saha, R.; Bhowmick, B.

Low to high-frequency noise behavior investigation of steeper sub-threshold swing NC-GeFinFET

Journal Article
Year: 2023. Volume: 131 , Pages: 105642 .
Authors: Maurya, R.K.; Saha, R.; Bhowmick, B.

Effects of Fitting Parameter on Device Performance and Reliability of Double-Gate n-FinFET by Using Bohm Quantum Potential (BQP) Model

Open Access
Other
Year: 2022.
Authors: Maurya, R.K.; Bhowmick, B.

Review of FinFET Devices and Perspective on Circuit Design Challenges

Journal Article
SILICON. Year: 2022. Volume: 14 , Issue: 11 , Pages: 5783-5791 .
Authors: Maurya, R.K.; Bhowmick, B.

Probing vertical magnetic fields with negative capacitance GAA-FinFET: sensitivity and performance analysis

Journal Article
Physica Scripta. Year: 2025. Volume: 100 , Issue: 6 .
Authors: Radhe Gobinda Debnath; Ravindra Kumar Maurya; Rajesh Kumar Pathak; Brinda Bhowmick

Impact of source/drain lateral straggle on GIDL current of low SS NC-FinFET

Journal Article
International Journal of Electronics. Year: 2025. Volume: 112 , Issue: 9 , Pages: 1987-2005 .
Authors: Ravindra Kumar Maurya; Vivek Kumar; Rajesh Saha; Brinda Bhowmick

A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing

Journal Article
Semiconductor Science & Technology. Year: 2024. Volume: 39 , Issue: 9 .
Authors: Ravindra Kumar Maurya; Radhe Gobinda Debnath; Ajeet Kumar Yadav; Brinda Bhowmick
Showing 1 to 8 of 15 publications