K.S. Sangunni
VIDWAN ID: 66737

Prof K.S. Sangunni

Male
Retired Faculty | Physics
Indian Institute of Science, Bangalore
Karnataka
Expertise: Applied Physics
82 Publications
0 Projects
1598 Scopus Citations
1383 CrossRef
12 Years 3 Months Total Experience
Publications
82 Total
Articles
69
Chapters
1
Proceedings
12
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Scopus Scopus
1,598 Citations
24 h-index
CrossRef CrossRef
1,383 Citations
23 h-index
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Retired Faculty
Jun 2014 – Present
Indian Institute of Science, Bangalore | Physics
Physical Sciences
Applied Physics

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Scholarly Publications

Consistent approach towards Bi doping mechanism in chalcogenide glasses from Cp measurement in Ge-Se-Te-Bi system

Journal Article
Solid State Communications. Year: 2000. Volume: 116 , Issue: 6 , Pages: 297-302 .
Authors: N Asha Bhat; K.S Sangunni

Carrier type reversal in PbxGe42-xSe58 and Pb20GeySe80-y glasses exhibited in thermal diffusivity measurements

Journal Article
Year: 2001. Volume: 3 , Issue: 2 , Pages: 467-472 .

Electrical resistivity of Cu doped As-Se glasses at high pressure

Conference Paper
PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS. Year: 2003. Volume: 235 , Issue: 2 , Pages: 536-541 .
Authors: K. Ramesh; N. Ramesh Rao; K. S. Sangunni; E. S. R. Gopal

The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy

Journal Article
Year: 2001. Volume: 3 , Issue: 3 , Pages: 735-740 .

PL due to discrete gap levels in some chalcogenide glasses- A configurational coordinate diagram illustration

Conference Paper
Year: 2001. Volume: 667 , Pages: G341-G346 .

A Fourier-transform photoluminescence study of radiative recombination mechanism in chalcogenide glasses

Journal Article
Journal of Non-Crystalline Solids. Year: 2003. Volume: 319 , Issue: 1-2 , Pages: 192-199 .
Authors: N Asha Bhat; K.S Sangunni; K.S.R.K Rao

Mixed doping in Ge10Se90-x-yInxBi y glasses

Journal Article

Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se/As <inf>2</inf>S <inf>3</inf> films

Journal Article
Journal of Applied Physics. Year: 2005. Volume: 97 , Issue: 4 , Pages: 044314 .
Authors: Adarsh, K.V.; Sangunni, K.S.; Kokenyesi, S.; Ivan, I.; Shipljak, M.
Showing 33 to 40 of 82 publications