Ministry of Education
Digbijoy N. Nath
VIDWAN ID: 66043

Dr Digbijoy N. Nath

Male Doctor of Philosophy
Associate Professor | Centre for Nano Science and Engineering
Indian Institute of Science, Bangalore
Karnataka
Expertise: Nanoscience and Nanotechnology
Scopus 36447830500 Google Scholar jtOKGpIAAAAJ
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66 Publications
0 Projects
1410 Scopus Citations
1373 CrossRef
11 Years 11 Months Total Experience
Publications
66 Total
Articles
57
Chapters
1
Proceedings
8
Activity

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Scopus Scopus
1,410 Citations
21 h-index
CrossRef CrossRef
1,373 Citations
21 h-index
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Personal Details

Doctor of Philosophy
2013
N/A
Bachelor of Engineering
2008
N/A
Associate Professor
Jul 2020 – Present
Indian Institute of Science, Bangalore | Centre for Nano Science and Engineering
Assistant Professor
Aug 2014 – Apr 2020
Indian Institute of Science, Bangalore | Centre for Nano Science and Engineering
Engineering and Technology
Nanoscience and Nanotechnology

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Scholarly Work

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TUNEABLE, BROADBAND ULTRAVIOLET LIGHT DETECTOR

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201841014782A Filed : 18-04-2018
Published : 25-10-2019 Published

Scholarly Publications

Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Journal Article
Applied Physics Letters. Year: 2018. Volume: 112 , Issue: 2 .
Authors: Piyush Jaiswal; Usman Ul Muazzam; Anamika Singh Pratiyush; Nagaboopathy Mohan; Srinivasan Raghavan; R. Muralidharan; S. A. Shivashankar; Digbijoy N. Nath
DOI 10.1063/1.5010683 Crossref Crossref: 56 Scopus Scopus: 56

Gallium nitride transistor on glass using epoxy mediated substrate transfer technology

Conference Paper
Year: 2017. Volume: 2018-February , Pages: 1-3 .
Authors: N.P. Vamsi Krishna; Nayana Ramesh; Nagaboopathy Mohan; Rangarajan Muralidharan; Srinivasan Raghavan; Digbijoy N Nath; Prosenjit Sen
DOI 10.1109/EPTC.2017.8277521 Crossref Crossref: 1 Scopus Scopus: 1

Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

Journal Article
Solid-State Electronics. Year: 2017. Volume: 137 , Pages: 117-122 .
Authors: Sandeep Kumar; Nayana Remesh; S.B. Dolmanan; S. Tripathy; S. Raghavan; R. Muralidharan; Digbijoy N. Nath
DOI 10.1016/j.sse.2017.09.002 Crossref Crossref: 15 Scopus Scopus: 13

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon with Carbon-Doped Buffer

Journal Article
IEEE Transactions on Electron Devices. Year: 2017. Volume: 64 , Issue: 12 , Pages: 4868-4874 .
Authors: Sandeep Kumar; Priti Gupta; Ivor Guiney; Colin J. Humphreys; Srinivasan Raghavan; R. Muralidharan; Digbijoy N. Nath
DOI 10.1109/TED.2017.2757516 Crossref Crossref: 36 Scopus Scopus: 41

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

Journal Article
Applied Physics Letters. Year: 2017. Volume: 111 , Issue: 25 .
Authors: Sandeep kumar; Anamika Singh Pratiyush; Surani B. Dolmanan; Sudhiranjan Tripathy; Rangarajan Muralidharan; Digbijoy N. Nath
DOI 10.1063/1.5004024 Crossref Crossref: 48 Scopus Scopus: 50

GaN buried channel normally off MOSHEMT: Design optimization and experimental integration on silicon substrate

Conference Paper
Year: 2018. Volume: 86 , Issue: 10 , Pages: 161-168 .
DOI 10.1149/08610.0161ec3t

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Journal Article
PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE. Year: 2018. Volume: 215 , Issue: 2 .
Authors: Vikash K. Singh; Digbijoy N. Nath
DOI 10.1002/pssa.201700757 Crossref Crossref: 4 Scopus Scopus: 4

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Open Access
Journal Article
Japanese Journal of Applied Physics. Year: 2018. Volume: 57 , Issue: 6 .
Authors: Anamika Singh Pratiyush; Sriram Krishnamoorthy; Sandeep Kumar; Zhanbo Xia; Rangarajan Muralidharan; Siddharth Rajan; Digbijoy N. Nath
DOI 10.7567/JJAP.57.060313 Crossref Crossref: 86 Scopus Scopus: 89
Showing 1 to 8 of 66 publications