Ashvinee Deo Meshram
VIDWAN ID: 653278

Dr Ashvinee Deo Meshram

Male Doctor of Philosophy
Assistant Professor | Department of Electronics and Communication Engineering
MANIPAL UNIVERSITY, JAIPUR
Rajasthan
Expertise: Electrical and Electronic Engineering
12 Publications
0 Projects
126 Scopus Citations
111 CrossRef
1 Year 11 Months Total Experience
Publications
12 Total
Articles
10
Proceedings
2
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Scopus Scopus
126 Citations
6 h-index
CrossRef CrossRef
111 Citations
6 h-index
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IEEE
Students
Jan 2025

Personal Details

Doctor of Philosophy
2026
Indian Institute of Technology, Ropar
Assistant Professor
Oct 2024 – Present
MANIPAL UNIVERSITY, JAIPUR | Department of Electronics and Communication Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Surface potential-based analytical modeling of charge and drain current in asymmetric β-Ga2O3 nanomembrane MOSFETs

Open Access
Journal Article
Journal of Physics D: Applied Physics. Year: 2026. Volume: 59 , Issue: 16 .
Authors: Anumita Sengupta; Ashvinee Deo Meshram; Tarun K Bhattacharyya; Gourab Dutta

Physics-based analytical modeling of β-(AlxGa1-x)2O3/Ga2O3 MODFETs considering parasitic conduction through delta-doped layer

Journal Article
Journal of Physics D: Applied Physics. Year: 2025. Volume: 58 , Issue: 29 .
Authors: Ashvinee Deo Meshram; Debanu Das; Sandra K Joseph; Anumita Sengupta; Tarun K Bhattacharyya; Gourab Dutta

Impact of Device Parameters on the Performance of β-Ga2O3Nanomembrane MESFETs

Journal Article
IEEE Transactions on Electron Devices. Year: 2024. Volume: 71 , Issue: 4 , Pages: 2557-2564 .
Authors: Anumita Sengupta; Ashvinee Deo Meshram; Tarun Kanti Bhattacharyya; Gourab Dutta

Breakdown voltage enhancement techniques in ß-Ga2O3 nanomembrane MESFETs

Conference Paper
Year: 2024.
Authors: Anumita Sengupta; Ashvinee Deo Meshram; Tarun K. Bhattacharyya; Gourab Dutta

Design Space of β-(AlxGa1-x)2O3/Ga2O3Double Heterojunction Field-Effect Transistors for High-Power Applications

Journal Article
IEEE Transactions on Electron Devices. Year: 2024. Volume: 71 , Issue: 8 , Pages: 4860-4866 .
Authors: Ashvinee Deo Meshram; Anumita Sengupta; Tarun K. Bhattacharyya; Gourab Dutta

Normally-Off β-(AlxGa1-x)2O3/Ga2O3Modulation-Doped Field-Effect Transistors with p-GaN Gate: Proposal and Investigation

Journal Article
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Issue: 2 , Pages: 454-460 .
Authors: Ashvinee Deo Meshram; Anumita Sengupta; Tarun K. Bhattacharyya; Gourab Dutta

ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3MODFETs with p-GaN Gate

Conference Paper
Year: 2023. Pages: 673-678 .
Authors: Ashvinee Deo Meshram; Anumita Sengupta; Tarun K. Bhattacharyya; Gourab Dutta

Investigating Undoped HfO2 as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure

Journal Article
Transactions on Electrical and Electronic Materials. Year: 2019. Volume: 20 , Issue: 5 , Pages: 467-472 .
Authors: Bhaskar Awadhiya; Pravin N. Kondekar; Ashvinee Deo Meshram
Showing 1 to 8 of 12 publications