Kuleen Kumar
VIDWAN ID: 609331

Dr Kuleen Kumar

Male Doctor of Philosophy
Assistant Professor | Department of Electronics and Communication Engineering
National Institute of Technology Puducherry
Expertise: Electrical and Electronic Engineering
24 Publications
0 Projects
101 Scopus Citations
87 CrossRef
3 Years 5 Months Total Experience
Publications
24 Total
Articles
16
Books
1
Proceedings
7
Activity

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Scopus Scopus
101 Citations
6 h-index
CrossRef CrossRef
87 Citations
6 h-index
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Professional Recognition

Best Paper Award
2021
Advances in Electrical, Computing, Communications and Sustainable Technologies (ICAECT 2021), IEEE
Best Paper Award
2024
International Conference on Semiconductor Materials and Manufacturing Technology 2024 (ICSMMT 2024)

Community & Membership

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Personal Details

Doctor of Philosophy
2022
National Institute of Technology, Silchar
Assistant Professor
Jan 2025 – Present
National Institute of Technology Puducherry | Department of Electronics and Communication Engineering
Post-Doctoral Fellow
Feb 2024 – Jan 2025
Indian Institute of Technology, Guwahati
Guest Faculty
Sep 2022 – Jun 2023
Mizoram University, Aizwal
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

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AN UNDERLAP INDUCED NANO SYSTEM WITH STRAINED-SI CHANNEL BASED DOUBLE GATE NANO-FIELD EFFECT TRANSISTOR (DGFET)

National Institute of Technology Mizoram
- Patent No. : 2023/02597 Filed : 27-02-2023
Published : 31-05-2023 Granted

A NANOSYSTEM-BASED DEVICE USING ULTRA-THIN TRI-LAYERED HOI CHANNEL WITH INCREASED DRIVE CURRENTS IN RECTANGULAR GATE

National Institute of Technology Mizoram
- Patent No. : 2023/02841 Filed : 27-02-2023
Published : 31-05-2023 Granted

A NANOWIRE SYSTEM FOR FASTER SWITCHING WITH ENHANCED ON-CURRENT AND ITS PREPARING PROCESS THEREOF

National Institute of Technology Mizoram
- Patent No. : 2023/02847 Filed : 27-02-2023
Published : 31-05-2023 Granted

A NANO-DEVICE USING ULTRA-THIN TRI-LAYERED STRAINED-CHANNEL FOR ENHANCING DRIVE CURRENTS IN TRI–GATE FIN-FET ARCHITECTURE

National Institute of Technology Mizoram
- Patent No. : 2023/02593 Filed : 27-02-2023
Published : 31-05-2023 Granted

A NANO-COMPOSITES BASED SMART MEMBRANE DEVICE WITH ENHANCED PERFORMANCE AND ITS PREPARATION PROCESS THEREOF

National Institute of Technology Mizoram
- Patent No. : 2021105410 Filed : 13-08-2021
Published : 27-10-2021 Granted

A NANOSYSTEM DEVICE FOR FASTER SWITCHING WITH REDUCED LEAKAGE AND ITS PREPARING PROCESS THEREOF

National Institute of Technology Mizoram
- Patent No. : 2021105335 Filed : 11-08-2021
Published : 27-10-2021 Granted

A M-O-(SI/SIGE/SI) STRUCTURED DEVICE OF TRI-LAYERED NANOSYSTEM SEMICONDUCTOR AND ITS PROCESS THEREOF

National Institute of Technology Mizoram
- Patent No. : 2021105085 Filed : 07-08-2021
Published : 20-04-2022 Granted

ULTRA-THIN COMPOSITE OF HETEROSEMICONDUCTOR ASSEMBLY LOADED ONTO OXIDE/METAL FORMING A FIVE-LAYERED DIELECTRIC BASED CAPACITIVE SYSTEM AT NANO REGIME

National Institute of Technology Mizoram
- Patent No. : 528098 Filed : 07-12-2020
Published : 15-03-2024 Granted

Scholarly Publications

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

Open Access
Journal Article
IEEE Access. Year: 2024. Volume: 12 , Pages: 66910-66920 .
Authors: Jeevanarao Batakala; Rudra Sankar Dhar; Kuleen Kumar; Arindam Biswas; Saurav Mallik; Naim Ahmad; Wade Ghribi; Ahmed Said Badawy

Retraction: Automatic Sensor Network analysis for Landslide Detection System

Open Access
Retracted
Journal of Physics: Conference Series. Year: 2021. Volume: 1916 , Issue: 1 .
Authors: A Reethika; T M Prakash; S Kavin Pranao; D Karan Raj; K Rakesh Kumar

Design and analysis of tri-layered strained channel HOI CGAA FET

Journal Article
International Journal of Nanoparticles. Year: 2022. Volume: 14 , Issue: 2-4 , Pages: 138-146 .
Authors: Rasmita Barik; Kuleen Kumar; Rudra Sankar Dhar

Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications

Open Access
Journal Article
IEEE Access. Year: 2025. Volume: 13 , Pages: 19469-19483 .
Authors: Rasmita Barik; Rudra Sankar Dhar; Kuleen Kumar; Yash Sharma; Amit Banerjee

Performance Analysis of Gate All Around Nanowire- FET in Subthreshold Region on 14nm Channel Length

Conference Paper
Year: 2025.
Authors: Aravinda Krishnan V.S.; Gokul S; Vuddagiri Kaushal Sri Surya; Kuleen Kumar

Development and Analysis of Nanosheet FETs for Faster Switching Application

Journal Article
Year: 2025. Volume: 270 , Issue: 3 , Pages: 97-108 .

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects

Open Access
Journal Article
Nanomaterials. Year: 2025. Volume: 15 , Issue: 23 .
Authors: Potaraju Yugender; Sneha Singh; Kuleen Kumar; Rudra Sankar Dhar; Alexey Y. Seteikin; Amit Banerjee; Ilia G. Samusev

The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length

Open Access
Journal Article
Nanomaterials. Year: 2023. Volume: 13 , Issue: 23 .
Authors: Priyanka Saha; Rudra Sankar Dhar; Swagat Nanda; Kuleen Kumar; Moath Alathbah
Showing 1 to 8 of 24 publications