Ministry of Education
Aasif Mohammad Bhat
VIDWAN ID: 606969

Dr Aasif Mohammad Bhat

Male Doctor of Philosophy
Maharashtra
Expertise: Multidisciplinary Engineering
ORCID 0000-0003-4767-9885
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32 Publications
0 Projects
380 Scopus Citations
368 CrossRef
Publications
32 Total
Articles
27
Proceedings
5
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Scopus Scopus
380 Citations
12 h-index
CrossRef CrossRef
368 Citations
11 h-index
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Doctor of Philosophy
N/A
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Engineering and Technology
Multidisciplinary Engineering

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Scholarly Publications

AlGaN/GaN HEMT pH Sensor Simulation Model and Its Maximum Transconductance Considerations for Improved Sensitivity

Journal Article
IEEE Sensors Journal. Year: 2021. Volume: 21 , Issue: 18 , Pages: 19753-19761 .
Authors: Aasif Mohammad Bhat; Nawaz Shafi; Chitrakant Sahu; C. Periasamy
DOI 10.1109/JSEN.2021.3100475 Crossref Crossref: 40 Scopus Scopus: 42

Performance analysis of MOS-HEMT as a biosensor: A dielectric modulation approach

Open Access
Other
Year: 2021.
Authors: Poonia, R.; Bhat, A.M.; Periasamy, C.; Sahu, C.
DOI 10.21203/rs.3.rs-1003011/v1

Performance Analysis of AlGaN MOSHEMT Based Biosensors for Detection of Proteins

Journal Article
Transactions on Electrical and Electronic Materials. Year: 2023. Volume: 24 , Issue: 3 , Pages: 188-193 .
Authors: Bouguenna, A.; Bouguenna, D.; Stambouli, A.B.; Loan, S.A.; Bhat, A.M.
DOI 10.1007/s42341-023-00434-y Crossref Crossref: 7 Scopus Scopus: 9

Comparative Study and Modeling of AlGaN/GaN Heterostructure HEMT and MOSHEMT Biosensors

Journal Article
Year: 2023.
Authors: Bouguenna, A.; Bouguenna, D.; Stambouli, A.B.; Bhat, A.M.
Scopus Scopus: 4

Impact of geometrical parameters on AlGaN/GaN heterostructure MOS-HEMT biosensor

Journal Article
Journal of Computational Electronics. Year: 2025. Volume: 24 , Issue: 1 , Pages: 30 .
Authors: Bouguenna, A.; Bouguenna, D.; Boudghene Stambouli, A.; Bhat, A.M.
DOI 10.1007/s10825-024-02247-5 Crossref Crossref: 3 Scopus Scopus: 3

Enhancing Breakdown and Microwave Performance of AlGaN/GaN HEMTs Through Tailored Passivation Layers: Design, Optimization, and Performance Analysis

Journal Article
Transactions on Electrical and Electronic Materials. Year: 2025. Volume: 26 , Issue: 4 , Pages: 500-516 .
Authors: Sufiyan, N.; Kumar, A.; Bhat, A.M.; Sharma, A.K.
DOI 10.1007/s42341-025-00603-1 Crossref Crossref: 2 Scopus Scopus: 3

Dual-Gate RF HEMT Based on P-GaN/AlGaN on Si Technology for Future X-Band On-Chip RF and Power Electronics

Conference Paper
Year: 2025.
Authors: Eblabla, A.; Sampson, W.; Bhat, A.M.; Collier, A.; Yadollahifarsi, E.; Elgaid, K.

Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate

Journal Article
Microelectronics Reliability. Year: 2023. Volume: 147 , Pages: 115036 .
Authors: Abdul Naim Khan; Aasif Mohammad Bhat; K. Jena; Trupti Ranjan Lenka; Gaurav Chatterjee
DOI 10.1016/j.microrel.2023.115036 Crossref Crossref: 22 Scopus Scopus: 22
Showing 1 to 8 of 32 publications