Vidwan-ID : 52269

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Scopus Id 6603930276

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Criteria	Point
Personal Details	1
Expertise Details	1
Experience Details	1
Qualification Details	1
Employee ID	0.2
Orcid ID	0.2
Researcher ID	0.2
Scopus ID	0.2
Google Scholar ID	0.2
Honours <=3< /td>	0.3
Honours >3	0.5
Project worth less than Rs.5,00,000/-	0.2
Project worth more than Rs.5,00,000/-	0.5
Membership in professional Bodies < 5	0.5
Membership in professional bodies >=5	1
No of publications <=15	1
No of publications between 15-45	2
No of publications >45	3

Vidwan Score 6.2

27 Articles

Dr Madhav Ranganathan

Associate Professor

Indian Institute of Technology Kanpur

Publications

27

Journal Articles
1
2
3
21

Citations / H-Index

159 Citations

7 h-index

166 Citations

Altmetrics

Co-author Network

Expertise

Physical Chemistry

Computational modeling of crystal growth

Personal Information

Dr Madhav Ranganathan

Male

SL 214A, Department Of Chemistry, Indian Institute Of Technology

, Uttar Pradesh, India - 208016

Experience in Months

Academic: 10 Administrative: 0 Industry: 0

Experience

2007 - Present

Associate Professor

Department of Chemistry

Indian Institute of Technology Kanpur, Kanpur Nagar

Qualification

2003

Ph.D

Stanford University, United States of America

Doctoral Theses Guided

2022

Theoretical modeling of Si-Ge heteroepitaxy: From quan- tum dots to quantum dot molecules

Indian Institute of Technology Kanpur,Monika

2018

Epitaxial growth of silicon and germanium on 2X1 recon- structed silicon (001) surface: A kinetic Monte Carlo study

Indian Institute of Technology Kanpur,Paramita Ghosh

2018

Continuum modeling of quantum dot formation in Silicon- Germanium heteroepitaxy

Indian Institute of Technology Kanpur,Gopal Krishna Dixit

2022

Theoretical modeling of Si-Ge heteroepitaxy: From quan- tum dots to quantum dot molecules

Indian Institute of Technology Kanpur,Monika

2018

Epitaxial growth of silicon and germanium on 2X1 recon- structed silicon (001) surface: A kinetic Monte Carlo study

Indian Institute of Technology Kanpur,Paramita Ghosh

2018

Continuum modeling of quantum dot formation in Silicon- Germanium heteroepitaxy

Indian Institute of Technology Kanpur,Gopal Krishna Dixit

2017

Biophysical and Bioinformatics Studies: (a) Calcium dynam- ics in neuronal cells, and (b) Clustering of gene expression data

Indian Institute of Technology Kanpur,Akhilesh Shende

2017

Adsorbate interactions on GaN(0001) surface and their effects on growing surface morphologies: A density functional theory and kinetic Monte Carlo based study

Indian Institute of Technology Kanpur,Manjusha

2014

Kinetic Monte Carlo simulations of growth of heteroepitaxial thin films

Indian Institute of Technology Kanpur,Pinku Nath

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Vidwan-ID : 52269

Academic Identity

Profile Links

Score criteria

Vidwan Score 6.2

Dr Madhav Ranganathan

Publications

Journal Articles

Citations / H-Index

Altmetrics

Co-author Network

Expertise

Physical Chemistry

Computational modeling of crystal growth

Personal Information

Dr Madhav Ranganathan

Experience in Months

Experience

Associate Professor

Qualification

Ph.D

Doctoral Theses Guided

Theoretical modeling of Si-Ge heteroepitaxy: From quan- tum dots to quantum dot molecules

Epitaxial growth of silicon and germanium on 2X1 recon- structed silicon (001) surface: A kinetic Monte Carlo study

Continuum modeling of quantum dot formation in Silicon- Germanium heteroepitaxy

Theoretical modeling of Si-Ge heteroepitaxy: From quan- tum dots to quantum dot molecules

Epitaxial growth of silicon and germanium on 2X1 recon- structed silicon (001) surface: A kinetic Monte Carlo study

Continuum modeling of quantum dot formation in Silicon- Germanium heteroepitaxy

Biophysical and Bioinformatics Studies: (a) Calcium dynam- ics in neuronal cells, and (b) Clustering of gene expression data

Adsorbate interactions on GaN(0001) surface and their effects on growing surface morphologies: A density functional theory and kinetic Monte Carlo based study

Kinetic Monte Carlo simulations of growth of heteroepitaxial thin films

Publications (27)

Contact Us

Vidwan-ID : 52269

Academic Identity

Profile Links

Score criteria

Vidwan Score 6.2

Dr Madhav Ranganathan

Publications

Journal Articles

Citations / H-Index

Altmetrics

Co-author Network

Publications - 27 Co-author - 88

Expertise

Physical Chemistry

Computational modeling of crystal growth

Personal Information

Dr Madhav Ranganathan

Experience in Months

Experience

Associate Professor

Qualification

Ph.D

Doctoral Theses Guided

Theoretical modeling of Si-Ge heteroepitaxy: From quan- tum dots to quantum dot molecules

Epitaxial growth of silicon and germanium on 2X1 recon- structed silicon (001) surface: A kinetic Monte Carlo study

Continuum modeling of quantum dot formation in Silicon- Germanium heteroepitaxy

Theoretical modeling of Si-Ge heteroepitaxy: From quan- tum dots to quantum dot molecules

Epitaxial growth of silicon and germanium on 2X1 recon- structed silicon (001) surface: A kinetic Monte Carlo study

Continuum modeling of quantum dot formation in Silicon- Germanium heteroepitaxy

Biophysical and Bioinformatics Studies: (a) Calcium dynam- ics in neuronal cells, and (b) Clustering of gene expression data

Adsorbate interactions on GaN(0001) surface and their effects on growing surface morphologies: A density functional theory and kinetic Monte Carlo based study

Kinetic Monte Carlo simulations of growth of heteroepitaxial thin films

Publications (27)

Contact Us