Abhinav Kranti
VIDWAN ID: 49414

Prof Abhinav Kranti

Male Doctor of Philosophy
Professor | Department of Electrical Engineering
Indian Institute of Technology, Indore
Madhya Pradesh
Expertise: Electrical and Electronic Engineering
202 Publications
0 Projects
4472 Scopus Citations
3959 CrossRef
15 Years 10 Months Total Experience
Publications
202 Total
Articles
112
Chapters
1
Proceedings
89
Activity

No publication activity to display.

Scopus Scopus
4,472 Citations
34 h-index
CrossRef CrossRef
3,959 Citations
33 h-index
Google Scholar Google Scholar

Loading Scholar statistics...

Professional Recognition

Senior Research Fellowship
2001
Council of Scientific and Industrial Research (CSIR), India

Community & Membership

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

Personal Details

Doctor of Philosophy
2001
N/A
Professor
Dec 2017 – Present
Indian Institute of Technology, Indore | Department of Electrical Engineering
Associate Professor
Nov 2010 – Dec 2017
Indian Institute of Technology, Indore | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

Scholarly Publications

Analytical modelling of threshold voltage and drain current in short channel fully depleted cylindrical gate MOSFET

Conference Paper
Year: 2000. Volume: 3975 .

Temperature-dependent threshold voltage analysis of surrounding/ cylindrical gate fully depleted thin film SOI MOSFET in the range 77 to 520 K

Journal Article
Microelectronic Engineering. Year: 1999. Volume: 49 , Issue: 3-4 , Pages: 273-286 .
Authors: Abhinav Kranti; Subhasis Haldar; R.S. Gupta

Analytical temperature dependent threshold voltage model for thin film surrounded gate SOI MOSFET

Conference Paper
Year: 2000. Volume: 3975 .

Two-dimensional analytical model for thin film fully depleted surrounding gate (SGT) MOSFET

Conference Paper
Year: 2000. Pages: 22 .

An accurate 2D analytical model for short channel thin film fully depleted cylindrical/surrounding gate (CGT/SGT) MOSFET

Journal Article
Year: 2001. Volume: 32 , Issue: 4 , Pages: 305-313 .
Authors: A. Kranti; S. Haldar; R.S. Gupta

Analytical two-dimensional model for an optically controlled thin-film fully depleted surrounding/cylindrical-gate (SGT) MOSFET

Journal Article
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. Year: 2001. Volume: 28 , Issue: 2 , Pages: 135-141 .

Design guidelines of vertical surrounding gate (VSG) MOSFETs for future ULSI circuit applications

Conference Paper
Year: 2001. Pages: 161-165 .
Authors: A. Kranti; Rashmi; S. Haldar; R.S. Gupta

Piezoelectric polarization dependent model of AlGaN/GaN high electron mobility transistors for improved microwave performance

Conference Paper
Year: 2001. Volume: 1 , Pages: 256-259 .
Showing 1 to 8 of 202 publications