Simulation of 2D material-based Nanoscale Tunnel FETs
UniversitySHRI RAMSWAROOP MEMORIAL UNIVERSITY
Year2023
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Scholarly Publications
Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon - Germanium substrates
An analytical model for the threshold voltage of short- channel double-material-gate (DMG) MOSFETs with a strained-silicon (s-Si) channel on silicon-germanium (SiGe) substrates