Ministry of Education
Nishant Srivastava
VIDWAN ID: 475778

Mr Nishant Srivastava

Male Doctor of Philosophy
Assistant Professor | Department of Electronics and Communication Engineering - NCR
SRM Institute of Science and Technology
Uttar Pradesh
Expertise: Telecommunications
ORCID 0000-0002-6556-7580 Scopus 57215425605 Google Scholar I7YWHmIAAAAJ
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12 Publications
0 Projects
20 Scopus Citations
19 CrossRef
14 Years 8 Months Total Experience
Publications
12 Total
Articles
6
Chapters
2
Proceedings
4
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Scopus Scopus
20 Citations
3 h-index
CrossRef CrossRef
19 Citations
3 h-index
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Personal Details

Doctor of Philosophy
2025
N/A
Master of Technology
2012
Cprompton Greaves Pvt. Ltd.
Assistant Professor
Jan 2012 – Present
SRM Institute of Science and Technology | Department of Electronics and Communication Engineering - NCR
Engineering and Technology
Telecommunications

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Scholarly Work

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Scholarly Publications

Modeling Analysis and Geometric Investigation of SOI FinFET for RF/AF Parameters

Journal Article
SILICON. Year: 2022. Volume: 14 , Issue: 13 , Pages: 8151-8159 .
Authors: Nishant Srivastava; Prashant Mani
DOI 10.1007/s12633-021-01574-7 Crossref Crossref: 3 Scopus Scopus: 3

GEOMETRIC INVESTIGATION AND PERFORMANCE ANALYSIS OF SOI FINFET FOR RF/AF PARAMETERS

Journal Article
Suranaree Journal of Science and Technology. Year: 2022.
Authors: Prashant Mani

Performance Investigation of Short Channel Impacts and Analog/RF Figure of Merits (FOMs) of SOI-FinFET

Book Chapter
Year: 2022. Pages: 457-466 .
Authors: Nishant Srivastava; Prashant Mani
DOI 10.1007/978-981-16-8721-1_44 Crossref Crossref: 1 Scopus Scopus: 1

Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

Conference Paper
AIP Conference Proceedings. Year: 2016. Volume: 1715 , Pages: 020014 .
Authors: Mani, P.; Tyagi, C.S.; Srivastav, N.
DOI 10.1063/1.4942696 Scopus Scopus: 1

Vertical Split Gate T-Shaped Tunneling Field-Effect Transistor Based pH Sensor for Charged and Neutral Biomolecules Detection in Low Concentration of Electrolyte

Journal Article
PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE. Year: 2026. Volume: 223 , Issue: 7 .
Authors: Girish Wadhwa; Anchal Thakur; Sheetal Singh; Prashant Mani; Nishant Srivastava; Srinivasa Rao Karumuri
DOI 10.1002/pssa.202500938

Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications

Journal Article
Micro and Nanostructures. Year: 2025. Volume: 199 .
Authors: Anchal Thakur; Michael Cholines Pedapudi; Nishant Shrivastva; Prashant Mani; Girish Wadhwa
DOI 10.1016/j.micrna.2024.208071 Crossref Crossref: 5 Scopus Scopus: 5

Lateral Si/Si1-xGex/Si Channel Heterostructure Charge Plasma Nanowire JLFET to Eliminate the Effects of Variation of Geometrical Dimensions

Open Access
Journal Article
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS. Year: 2025. Volume: 38 , Issue: 2 .
Authors: Anchal Thakur; Prashant Mani; Prabin Kumar Bera; Nishant Srivastava; Girish Wadhwa; Antonino Proto
DOI 10.1002/jnm.70042 Crossref Crossref: 7 Scopus Scopus: 6

Design and Investigation of Junctionless N+ Pocket Doped Vertical-TFET with Binary Metal Alloy PαQ1-α

Conference Paper
Year: 2024.
Authors: Girish Wadhwa; Nishant Srivastava; Prashant Mani; Anchal Thakur
DOI 10.1109/ICEPES60647.2024.10653488
Showing 1 to 8 of 12 publications