Padma Rapur
VIDWAN ID: 423983

Dr Padma Rapur

Female Doctor of Philosophy
Assistant Professor | Physics
Institute of Aeronautical Engineering
Expertise: Condensed Matter Physics
24 Publications
0 Projects
502 Scopus Citations
495 CrossRef
3 Years Total Experience
Publications
24 Total
Articles
21
Proceedings
3
Activity

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Scopus Scopus
502 Citations
14 h-index
CrossRef CrossRef
495 Citations
14 h-index
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Professional Recognition

BK-21 Post Doctoral Fellow
2018
Yonsei University, South Korea

Community & Membership

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Personal Details

Doctor of Philosophy
2017
N/A
Master of Philosophy
2015
N/A
Master of Science
2007
N/A
Bachelor of Science
2005
N/A
Assistant Professor
Sep 2023 – Present
Institute of Aeronautical Engineering | Physics
Physical Sciences
Condensed Matter Physics

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Scholarly Work

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Scholarly Publications

Dazzling green emission from graphene oxide nanosheet-embedded co-doped Ce3+ and Tb3+:PVA polymer nanocomposites for photonic applications

Journal Article
RSC Advances. Year: 2016. Volume: 6 , Issue: 59 , Pages: 54525-54538 .
Authors: K. Naveen Kumar; R. Padma; J. L. Rao; Misook Kang

Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures

Journal Article
PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE. Year: 2012. Volume: 209 , Issue: 10 , Pages: 2027-2033 .
Authors: V. Rajagopal Reddy; R. Padma; M. Siva Pratap Reddy; C.‐J. Choi

Electrical and structural properties of Ir/Ru Schottky rectifiers on n-type InGaN at different annealing temperatures

Journal Article
Superlattices and Microstructures. Year: 2013. Volume: 56 , Pages: 64-76 .
Authors: R. Padma; B. Prasanna Lakshmi; M. Siva Pratap Reddy; V. Rajagopal Reddy

Capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature

Journal Article
Superlattices and Microstructures. Year: 2013. Volume: 60 , Pages: 358-369 .
Authors: R. Padma; B. Prasanna Lakshmi; V. Rajagopal Reddy

Thermal annealing effects on electrical properties of Ir/Ru Schottky contacts on n-InGaN

Conference Paper
Year: 2013. Volume: 1536 , Pages: 469-470 .
Authors: R. Padma; B. Prasanna lakshmi; V. Rajagopal Reddy

Electrical properties of Ir/n-InGaN/Ti/Al schottky barrier diode in a wide temperature range

Open Access
Journal Article
Advanced Materials Letters. Year: 2014. Volume: 5 , Issue: 1 , Pages: 31-38 .
Authors: R. Padma; V. Rajagopal Reddy

Electrical characteristics and interface states of Au/poly(ethylmethacrylate)/n-InP organic-modified Schottky diode at room temperature

Journal Article
Year: 2014. Volume: 16 , Issue: 9-10 , Pages: 1131-1136 .

Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode

Journal Article
Superlattices and Microstructures. Year: 2015. Volume: 83 , Pages: 48-60 .
Authors: R. Padma; K. Shanthi Latha; V. Rajagopal Reddy; Chel-Jong Choi
Showing 1 to 8 of 24 publications