Augustine Fletcher A S
VIDWAN ID: 356485

Dr Augustine Fletcher A S

Male Doctor of Philosophy
Assistant Professor | Electronics and Communication Engineering
Karunya Institute of Technology and Sciences, Coimbatore
Tamil Nadu
Expertise: Telecommunications
34 Publications
0 Projects
982 Scopus Citations
970 CrossRef
14 Years 4 Months Total Experience
Publications
34 Total
Articles
29
Proceedings
5
Activity

No publication activity to display.

Scopus Scopus
982 Citations
13 h-index
CrossRef CrossRef
970 Citations
13 h-index
Google Scholar Google Scholar

Loading Scholar statistics...

Professional Recognition

No Data Found

There is currently nothing to display here.

Community & Membership

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

Personal Details

Doctor of Philosophy
2020
N/A
Assistant Professor
May 2012 – Present
Karunya Institute of Technology and Sciences, Coimbatore | Electronics and Communication Engineering
Engineering and Technology
Telecommunications

Related Profiles

Scholarly Work

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

Scholarly Publications

High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study

Journal Article
Microelectronics Journal. Year: 2023. Volume: 140 , Pages: 105946 .
Authors: Sivamani, C.; Murugapandiyan, P.; Mohanbabu, A.; Fletcher, A.

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

Journal Article
Journal of Electronic Materials. Year: 2024. Volume: 53 , Issue: 5 , Pages: 2601-2608 .
Authors: A. S. Augustine Fletcher; S. Angen Franklin; P. Murugapandiyan; J. Ajayan; D. Nirmal

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

Journal Article
AEU - International Journal of Electronics and Communications. Year: 2019. Volume: 108 , Pages: 189-194 .
Authors: L. Arivazhagan; D. Nirmal; D. Godfrey; J. Ajayan; P. Prajoon; A.S. Augustine Fletcher; A. Amir Anton Jone; J.S. Raj Kumar

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

Journal Article
Superlattices and Microstructures. Year: 2018. Volume: 113 , Pages: 810-820 .
Authors: D. Nirmal; L. Arivazhagan; A.S.Augustine Fletcher; J. Ajayan; P. Prajoon

Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers

Journal Article
Applied Physics A. Year: 2025. Volume: 131 , Issue: 5 , Pages: 397 .
Authors: Fletcher, A.S.A.; Murugapandiyan, P.; Mohanbabu, A.; Dhanasekar, S.; Saranya, G.

Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance

Journal Article
Materials Science in Semiconductor Processing. Year: 2025. Volume: 193 , Pages: 109509 .
Authors: Murugapandiyan, P.; Maheswari, S.; Fletcher, A.S.A.; Saranya, G.; Anandan, P.

Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics

Journal Article
Microelectronic Engineering. Year: 2025. Volume: 299 , Pages: 112359 .
Authors: Murugapandiyan, P.; Fletcher, A.S.A.; Hasan, M.T.; Ramkumar, N.; Revathy, A.

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

Journal Article
Journal of Electronic Materials. Year: 2024. Volume: 53 , Issue: 6 , Pages: 2973-2987 .
Authors: Murugapandiyan, P.; Sri Rama Krishna, K.; Revathy, A.; Fletcher, A.
Showing 1 to 8 of 34 publications