Ministry of Education
Atanu Das
VIDWAN ID: 333064

Dr Atanu Das

Male Doctor of Philosophy
Associate Professor | Department of Pure and Applied Sciences
Midnapore City College
West Bengal
Expertise: Applied Physics
ORCID 0000-0002-1733-626X Scopus 57212479973 ResearcherID M-9634-2016 Google Scholar h6IavTQAAAAJ
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35 Publications
0 Projects
1 Scopus Citations
418 CrossRef
12 Years 8 Months Total Experience
Publications
35 Total
Articles
31
Proceedings
4
Activity

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Scopus Scopus
1 Citations
1 h-index
CrossRef CrossRef
418 Citations
11 h-index
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Professional Recognition

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Community & Membership

Phi-Tao-Phi Scholar Society, Taiwan
Honorary Member
Jan 2013
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Personal Details

Doctor of Philosophy
2013
N/A
Master of Science
2001
Sardargunj Mercantile Co. Op. Bank Ltd. (Anand) English Medium College of Commerce & Management, Vallabh Vidyanagar
Bachelor of Science
1999
Sardargunj Mercantile Co. Op. Bank Ltd. (Anand) English Medium College of Commerce & Management, Vallabh Vidyanagar
Associate Professor
Sep 2021 – Present
Midnapore City College | Department of Pure and Applied Sciences
Assistant Professor
Jun 2017 – Nov 2020
Madanapalle Institute of Technology & Science, Madanapalle
Post-Doctoral Research Associate
Jan 2015 – May 2017
Academia Sinica
Post-Doctoral Fellow
Apr 2013 – Dec 2014
National Tsing Hua University, Hsinchu, Taiwan
Physical Sciences
Applied Physics

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Scholarly Work

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High Electron Mobility Field Effect Transistor (HEMT) Device

Chang Gung University (CGU)
- Patent No. : US20100230722A1 Filed : 05-11-2009
Published : 16-09-2010 Published

Scholarly Publications

The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Journal Article
Year: 2007.
Authors: Das, A.; Khan, A.

A new method for implementation of opto-electronic and all-optical flip-flop

Conference Paper
Year: 2002.
Authors: Mukhopadhyay, S.; Roy, J.N.; Ghosh, P.; De, S.; Patra, D.; Shit, S.; Jana, N.G.; Das, A.; Das, P.P.

Carrier concentrations in degenerate semiconductors having band gap narrowing

Journal Article
Year: 2008.
Authors: Das, A.; Khan, A.

Flash memory device characteristics of atomic layer deposited crystallite A1<inf>2</inf>O<inf>3</inf> films with large memory window and long retention

Conference Paper
Year: 2008. Pages: 1-2 .
Authors: Maikap, S.; Banerjee, W.; Rahaman, S.Z.; Das, A.
DOI 10.1109/SNW.2008.5418388

Mobility-diffusivity relationship for heavily doped organic semiconductors

Journal Article
Applied Physics A. Year: 2008. Volume: 93 , Issue: 2 , Pages: 527-532 .
Authors: Das, A.; Khan, A.
DOI 10.1007/s00339-008-4729-2 Crossref Crossref: 8

Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands

Journal Article
Applied Physics A. Year: 2007. Volume: 89 , Issue: 3 , Pages: 695-699 .
Authors: Khan, A.; Das, A.
DOI 10.1007/s00339-007-4160-0 Crossref Crossref: 5

Wide-band double-ring resonator with transmission zeros and resonances using high permittivity aluminum nitride substrate

Journal Article
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. Year: 2009. Volume: 51 , Issue: 12 , Pages: 2878-2882 .
Authors: Liu, J.-C.; Wang, J.-W.; Das, A.; Chang, L.-B.
DOI 10.1002/mop.24787 Crossref Crossref: 1

Physical and memory characteristics of atomic-layer-deposited high-κ hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Journal Article
Japanese Journal of Applied Physics. Year: 2009. Volume: 48 , Issue: 5S1 , Pages: 05DF02 .
Authors: Das, A.; Maikap, S.; Li, W.-C.; Chang, L.-B.; Yang, J.-R.
DOI 10.1143/JJAP.48.05DF02 Crossref Crossref: 5
Showing 1 to 8 of 35 publications