Ministry of Education
Sasmita Sahoo
VIDWAN ID: 298020

Dr Sasmita Sahoo

Female Doctor of Philosophy
Assistant Professor
Siksha 'O' Anusandhan (2022 - 2023)
Odisha
Expertise: Nanoscience and Nanotechnology
ORCID 0000-0002-2186-0988 Google Scholar -PT9YSIAAAAJ
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8 Publications
0 Projects
4 Scopus Citations
109 CrossRef
11 Months Total Experience
Publications
8 Total
Articles
5
Proceedings
3
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Scopus Scopus
4 Citations
1 h-index
CrossRef CrossRef
109 Citations
6 h-index
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Personal Details

Doctor of Philosophy
2022
Maharaja Sriram Chandra Bhanja Deo University
Assistant Professor
May 2022 – Mar 2023
Siksha 'O' Anusandhan
Engineering and Technology
Nanoscience and Nanotechnology

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Scholarly Publications

Tunneling path based analytical drain current model for double gate Tunnel FET (DG-TFET)

Conference Paper
Year: 2016. Pages: 337-341 .
Authors: S. Sahoo; S. Panda; G. P. Mishra; S. Dash
DOI 10.1109/ICETEESES.2016.7581405 Crossref Crossref: 3 Scopus Scopus: 4

Impact of drain doping engineering on ambipolar and high-frequency performance of ZHP line-TFET

Journal Article
Semiconductor Science & Technology. Year: 2020. Volume: 35 , Issue: 6 , Pages: 065003 .
Authors: Sahoo, S.; Dash, S.; Routray, S.R.; Mishra, G.P.
DOI 10.1088/1361-6641/ab7ce7 Crossref Crossref: 24

Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping

Journal Article
SILICON. Year: 2020. Volume: 13 , Issue: 12 , Pages: 4275-4283 .
Authors: Sahoo, S.; Dash, S.; Routray, S.R.; Mishra, G.P.
DOI 10.1007/s12633-020-00736-3 Crossref Crossref: 17

Z-shaped gate TFET with horizontal pocket for improvement of electrostatic behavior

Journal Article
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS. Year: 2020. Volume: 34 , Issue: 1 , Pages: e2808 .
Authors: Sahoo, S.; Dash, S.; Routray, S.R.; Mishra, G.P.
DOI 10.1002/jnm.2808 Crossref Crossref: 25

A New Z-Shaped Gate Line Tunnel FET with Improved Electrostatic Performance

Journal Article
Iranian Journal of Science and Technology, Transactions of Electrical Engineering. Year: 2021. Volume: 45 , Issue: 3 , Pages: 1037-1050 .
Authors: Sahoo, S.; Dash, S.; Routray, S.R.; Mishra, G.P.
DOI 10.1007/s40998-020-00400-x Crossref Crossref: 15

An accurate drain current model for symmetric dual gate tunnel FET using effective tunneling length

Journal Article
Nanoscience & Nanotechnology-Asia. Year: 2019. Volume: 9 , Issue: 1 , Pages: 85-91 .
Authors: Sahoo, S.; Dash, S.; Mishra, G.P.
DOI 10.2174/2210681207666170612081017 Crossref Crossref: 3

Work-function modulated hetero gate charge plasma TFET to enhance the device performance

Conference Paper
Year: 2019. Pages: 461-464 .
Authors: Sahoo, S.; Dash, S.; Mishra, G.P.
DOI 10.1109/DEVIC.2019.8783943 Crossref Crossref: 16

An Extensive Simulation Study of Gaussian Drain Doped Heterojunction Double Gate TFET

Conference Paper
Year: 2018. Pages: 283-287 .
Authors: Sahoo, S.; Dash, S.; Mishra, G.P.
DOI 10.1109/EDKCON.2018.8770387 Crossref Crossref: 6