Ministry of Education
Harsupreet Kaur
VIDWAN ID: 283469

Prof Harsupreet Kaur

Female Doctor of Philosophy
Associate Professor | Department of Electronic Science
University of Delhi
Delhi
Expertise: Electrical and Electronic Engineering
Scopus 13205623400
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92 Publications
0 Projects
480 Scopus Citations
428 CrossRef
13 Years 5 Months Total Experience
Publications
92 Total
Articles
36
Chapters
2
Proceedings
54
Activity

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Scopus Scopus
480 Citations
12 h-index
CrossRef CrossRef
428 Citations
11 h-index
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Professional Recognition

Young Scientist Award
2008
International Union of Radio Science (Union Radio-Scientifique Internationale)

Community & Membership

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IEEE USA
Senior member
Jan 2018
Electronic Devices Society, USA
Senior member
Jan 2012
Semiconductor Society of India
Life member
Jan 2013
IEEE EDS Delhi Chapter
EXCOM member
Jan 2019
IEEE EDS Delhi Chapter
Secretary
Jan 2019

Personal Details

Doctor of Philosophy
2009
Acharya NG Ranga Agricultural University, Guntur
Associate Professor
Apr 2013 – Present
University of Delhi | Department of Electronic Science
Engineering and Technology
Electrical and Electronic Engineering

Related Profiles

Scholarly Work

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Scholarly Publications

Ferroelectric-insulator-germanium double gate (F-I-GeDG) FET with steep switching characteristics and improved current drivability

Conference Paper
Year: 2019. Pages: 527-530 .
Authors: Monika Bansal; Harsupreet Kaur
DOI 10.1109/GUCON.2018.8674938

Drain Current Model of Reconfigurable Ferroelectric Field Effect Transistor (R-Fe-FET)

Conference Paper
Year: 2018.
Authors: Priyanka Pandey; Harsupreet Kaur
DOI 10.1109/I2CT42659.2018.9057805 Crossref Crossref: 1 Scopus Scopus: 2

Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET - A Novel Device Concept for Improved Performance

Conference Paper
Year: 2018.
Authors: Priyanka Pandey; Pooja Puri; Harsupreet Kaur
DOI 10.1109/ICAECC.2018.8479447

Double Gate Gaussian Doped Negative Capacitance FET (DGGDNCFET): A Novel Concept for Enhanced Device Performance

Conference Paper
Year: 2018.
Authors: Hema Mehta; Harsupreet Kaur
DOI 10.1109/INDICON.2017.8487702

Impact of ferroelectric material properties on device characteristics of ferroelectric Ge0.97Sn0.03 Double Gate FET (FEGeSnDGFET)

Conference Paper
Year: 2018.
Authors: Monika Bansal; Harsupreet Kaur
DOI 10.1109/IMaRC.2018.8877157

Negative Capacitance Germanium-Double Gate FET- A Novel Device Concept for Ultra Low Voltage/Low Power Applications

Conference Paper
Year: 2018. Pages: 293-296 .
Authors: Monika Bansal; Harsupreet Kaur
DOI 10.1109/CETIC4.2018.8531053

Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

Conference Paper
Year: 2018. Pages: 1-4 .
Authors: Monika Bansal; Harsupreet Kaur
DOI 10.1109/ICEDSS.2018.8544314 Scopus Scopus: 2

An analytical subthreshold current model for ferroelectric SiGe-on-insulator field effect transistor (FSGOIFET)

Open Access
Journal Article
Semiconductor Science & Technology. Year: 2019. Volume: 34 , Issue: 1 .
Authors: Monika Bansal; Harsupreet Kaur
DOI 10.1088/1361-6641/aaf2e6 Scopus Scopus: 2
Showing 1 to 8 of 92 publications