Santsosh Bobade
VIDWAN ID: 257186

Dr Santsosh Bobade

Male Doctor of Philosophy
Assistant Professor - Selection Grade | Department of Physics
Jaypee University of Engineering & Technology, Guna (2011 - 2008)
Madhya Pradesh
Expertise: Applied Physics
31 Publications
1 Projects
696 Scopus Citations
629 CrossRef
2 Years 8 Months Total Experience
Publications
31 Total
Articles
26
Proceedings
5
Activity

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Scopus Scopus
696 Citations
14 h-index
CrossRef CrossRef
629 Citations
14 h-index
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Personal Details

Doctor of Philosophy
2007
Indian Institute of Technology, Hyderabad
Assistant Professor - Selection Grade
Aug 2011 – Mar 2008
Jaypee University of Engineering & Technology, Guna | Department of Physics
Research Fellow
Mar 2008 – Feb 2010
Hanyang University, South Korea
Senior Research Engineer
Jul 2007 – Feb 2008
Sungkyunkwan University
Physical Sciences
Applied Physics

Related Profiles

Scholarly Work

Development of PA2200 based nano-composite materials for Selective Laser sintering
Completed
Role: Principal Investigator Grant: A/RD/RP-2/2016-17/262

Materials Optimization for Selective Laser Sintering Process

University Jaypee University of Engineering and Technology
Year 2017
Downloads 0

Nanomaterials for energy storage devices

University Jaypee University of Engineering and Technology
Year 2019
Downloads 0

Ion conducting Polymer electrolyte for Electrochemical device

University Jaypee University of Engineering and Technology
Year 2019
Downloads 0

Pressureless casting methodology

201721042883
- Patent No. : India Filed : 30-11-2017
Published : 30-11--0001 Published

Scholarly Publications

Fabrication of an a-IGZO thin film transistor using selective deposition of cobalt by the self-assembly monolayer (SAM) process

Journal Article
Journal of Nanoscience and Nanotechnology. Year: 2011. Volume: 11 , Issue: 1 , Pages: 787-790 .
Authors: Cho, Y.-J.; Kim, H.; Park, K.-Y.; Lee, J.; Bobade, S.M.; Wu, F.-C.; Choi, D.-K.

A reconstruction of cubic rs-ZnO on MgO (200) substrate through (100) plane of w-ZnO:rs-ZnO for transparent electronic application

Journal Article
Applied Physics Letters. Year: 2012. Volume: 100 , Issue: 7 , Pages: 072102 .
Authors: Bobade, S.M.

Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

Journal Article
Applied Physics Letters. Year: 2010. Volume: 96 , Issue: 22 , Pages: 222101 .
Authors: Seo, H.; Cho, Y.-J.; Kim, J.; M.bobade, S.; Park, K.-Y.; Lee, J.; Choi, D.-K.

Evaluation of Y<inf>2</inf>O<inf>3</inf> gate insulators for a-IGZO thin film transistors

Journal Article
Thin Solid Films. Year: 2009. Volume: 517 , Issue: 14 , Pages: 4115-4118 .
Authors: Cho, Y.-J.; Shin, J.-H.; Bobade, S.M.; Kim, Y.-B.; Choi, D.-K.

Room temperature fabrication Oxide TFT with Y <inf>2</inf> O <inf>3</inf> as a gate oxide and Mo contact

Journal Article
Applied Surface Science. Year: 2009. Volume: 255 , Issue: 17 , Pages: 7831-7833 .
Authors: Bobade, S.M.; Shin, J.-H.; Cho, Y.-J.; You, J.-S.; Choi, D.-K.

The effects of rapid thermal annealing on the performance of ZnO thin-film transistors

Journal Article
Journal of the Korean Physical Society. Year: 2009. Volume: 55 , Issue: 5(1) , Pages: 1925-1930 .
Authors: Park, C.J.; Kim, Y.-W.; Cho, Y.-J.; Bobade, S.M.; Choi, D.-K.; Lee, S.B.

Uniform crystallization of a 3″ amorphous-Si TFT array employing field-aided lateral crystallization

Journal Article
Journal of the Korean Physical Society. Year: 2009. Volume: 55 , Issue: 5(1) , Pages: 1882-1886 .
Authors: Kim, M.-H.; Jung, J.-H.; Bobade, S.M.; Choi, D.-K.; Kim, Y.-B.; Shin, J.-H.

Novel ZrO<inf>2</inf>/Si<inf>3</inf>N<inf>4</inf> dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application

Conference Paper
Year: 2007. Pages: 83-86 .
Authors: Zhang, G.; Wan, S.H.; Bobade, S.M.; Lee, S.-H.; Cho, B.-J.; Won, J.Y.
Showing 9 to 16 of 31 publications