Dr Pragati Singh
Assistant Professor
| Department of Electronic and Communication Engineering
National Institute of Technology Mizoram
Mizoram
Expertise:
Electrical and Electronic Engineering
13
Publications
1
Projects
38
Scopus Citations
32
CrossRef
12 Years 8 Months Total Experience
Scopus
38
Citations
3
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CrossRef
32
Citations
3
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Professional Recognition
International Reserach Leadership Award
2020
International Research Councils and World Research Council
Community & Membership
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IEEE
AnnuallyWorld Research Council
LifetimePersonal Details
Doctor of Philosophy
2022
National Institute of Technology, Silchar
Assistant Professor
Jan 2014 – Present
National Institute of Technology Mizoram
| Department of Electronic and Communication Engineering
Engineering and Technology
Scholarly Work
Special Manpower Development Program for Chip to System Design (SMDP-C2SD) 1. Air Quality Montioring System (Cluster) 2. FPGA level Design of Dgital Image Watermarking using VHDL (Individual
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Scholarly Publications
Bipolar effects in snapback mechanism in advanced n-fet transistors under high current stress conditions
Open AccessHardware implementation of adaptive feedback based reversible image watermarking for image processing application
Effects of Interface Charge (Q <sub>it</sub> ) and Interface Trap Density (D <sub>it</sub> ) on Al <sub>2</sub> O <sub>3</sub> , ZrO <sub>2</sub> and HfO <sub>2</sub> based Nano Regime Multi-Gate Devices
10.1109/ICDCSyst.2018.8605166
Scopus: 2
Investigations of Interface Trap Densities (D<sub>it</sub>) and Interface Charges (Q<sub>it</sub>) for Steep Retrograded Al<sub>2</sub>O<sub>3</sub>and HfO<sub>2</sub>based Nano Regime GAA FinFETs
Performance reliability of ultra-thin Si-SiO <sub>2</sub> , Si-Al <sub>2</sub> O <sub>3</sub> , Si-ZrO <sub>2</sub> and Si-HfO <sub>2</sub> interface in rectangular steep retrograded nano-regimes devices
Study of Carrier Scattering and Quantization Effects in Steep Retrograded Double Gate FinFETs for Nano Technology Applications
Study of Carrier Scattering and Quantization Effects in Steep Retrograded Gate All around FinFETs for Nano Technology Applications
Analysis of interface trap charges and densities using capacitance-voltage (C-V) and conductance voltage(G-V) methods in steep retrograded Al<sub>2</sub>O<sub>3</sub>, ZrO<sub>2</sub> and HfO<sub>2</sub> based gate all around FinFETs
Showing 1 to 8 of 13 publications